Overview
The CSD17577Q3A is a 30 V, N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize resistance in power conversion applications, making it highly efficient for various high-power systems. It features a low on-resistance (RDS(on)) and low thermal resistance, which are crucial for maintaining high performance and reliability. The MOSFET is packaged in a compact SON 3.3 mm × 3.3 mm package, making it suitable for space-constrained designs.
Key Specifications
| Parameter | Typical Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDS) | 30 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 19 | A |
| Pulsed Drain Current (IDM) | 239 | A |
| Drain-to-Source On-Resistance (RDS(on)) at VGS = 4.5 V | 5.3 | mΩ |
| Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V | 4.0 | mΩ |
| Gate Charge Total (Qg) at VGS = 4.5 V | 13 | nC |
| Gate Charge Gate-to-Drain (Qgd) | 2.5 | nC |
| Threshold Voltage (VGS(th)) | 1.4 | V |
| Junction-to-Ambient Thermal Resistance (RθJA) | 55 | °C/W |
| Operating Junction Temperature (TJ) | -55 to 150 | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
Key Features
- Low On-Resistance (RDS(on)): 5.3 mΩ at VGS = 4.5 V and 4.0 mΩ at VGS = 10 V, ensuring high efficiency in power conversion applications.
- Low Thermal Resistance: Junction-to-ambient thermal resistance (RθJA) of 55°C/W, which helps in maintaining device reliability.
- Avalanche Rated: The MOSFET is designed to handle high-energy pulses, making it robust for demanding applications.
- Low Gate Charge (Qg): Total gate charge of 13 nC at VGS = 4.5 V, facilitating faster switching times.
- Pb-Free, RoHS Compliant, and Halogen Free: Environmentally friendly and compliant with regulatory standards.
- Compact Package: SON 3.3 mm × 3.3 mm package, ideal for space-constrained designs.
Applications
- Point-of-Load Synchronous Buck Converters: Suitable for networking, telecom, and computing systems.
- Control and Sync FET Applications: Optimized for use in control and synchronous FET roles.
- Hot Swap and ORing Applications: Can be used in conjunction with hot swap controllers for safe and efficient power management.
- DC/DC Converter Applications: Can be paired with DC/DC controllers like the LM27403 for complete synchronous buck converter solutions.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD17577Q3A?
The maximum drain-to-source voltage (VDS) is 30 V.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V?
The typical on-resistance (RDS(on)) at VGS = 10 V is 4.0 mΩ.
- What is the gate charge total (Qg) at VGS = 4.5 V?
The gate charge total (Qg) at VGS = 4.5 V is 13 nC.
- What is the junction-to-ambient thermal resistance (RθJA)?
The junction-to-ambient thermal resistance (RθJA) is 55°C/W.
- Is the CSD17577Q3A Pb-Free and RoHS Compliant?
- What is the package type of the CSD17577Q3A?
The package type is SON 3.3 mm × 3.3 mm.
- What are the typical applications of the CSD17577Q3A?
Typical applications include point-of-load synchronous buck converters, control and sync FET applications, hot swap and ORing applications, and DC/DC converter applications.
- What is the maximum continuous drain current (ID)?
The maximum continuous drain current (ID) is 19 A.
- What is the threshold voltage (VGS(th))?
The threshold voltage (VGS(th)) is 1.4 V.
- What is the maximum junction temperature (TJ)?
The maximum junction temperature (TJ) is 150°C.
- Is the CSD17577Q3A avalanche rated?
