CSD17577Q3AT
  • Share:

Texas Instruments CSD17577Q3AT

Manufacturer No:
CSD17577Q3AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 35A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17577Q3AT is a 30 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize resistance in power conversion applications, making it highly efficient for various high-power needs. It features a compact SON 3.3 mm × 3.3 mm package, which is Pb-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDS - Drain-to-Source Voltage VGS = 0 V, ID = 250 μA - 30 - V
VGS - Gate-to-Source Voltage - - ±20 - V
ID - Continuous Drain Current (Package limited) TC = 25°C - 35 - A
ID - Continuous Drain Current (Silicon limited) TC = 25°C - 83 - A
IDM - Pulsed Drain Current Pulse duration ≤100 μs, duty cycle ≤1% - 239 - A
RDS(on) - Drain-to-Source On-Resistance VGS = 10 V, ID = 16 A 4.0 4.8 - mΩ
VGS(th) - Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.1 1.4 1.8 V
Qg - Gate Charge Total (4.5 V) VGS = 4.5 V 13 17 - nC
Qgd - Gate Charge Gate-to-Drain VDS = 15 V, ID = 16 A 2.5 2.8 - nC
TJ - Operating Junction Temperature - -55 - 150 °C

Key Features

  • Low Qg and Qgd for efficient switching
  • Low thermal resistance
  • Avalanche rated for robust operation
  • Pb-free, RoHS compliant, and halogen-free
  • Compact SON 3.3 mm × 3.3 mm package
  • Optimized for control and sync FET applications

Applications

  • Point-of-Load synchronous buck converters in networking, telecom, and computing systems
  • Control and sync FET applications

Q & A

  1. What is the maximum drain-to-source voltage of the CSD17577Q3AT?

    The maximum drain-to-source voltage is 30 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current rating is 35 A for the package and 83 A for the silicon.

  3. What is the typical on-state resistance at VGS = 10 V and ID = 16 A?

    The typical on-state resistance is 4.8 mΩ.

  4. What are the operating junction temperature limits?

    The operating junction temperature limits are from -55°C to 150°C.

  5. Is the CSD17577Q3AT Pb-free and RoHS compliant?

    Yes, it is Pb-free, RoHS compliant, and halogen-free.

  6. What is the gate charge total at VGS = 4.5 V?

    The gate charge total at VGS = 4.5 V is typically 17 nC.

  7. What are the typical applications of the CSD17577Q3AT?

    Typical applications include point-of-load synchronous buck converters in networking, telecom, and computing systems, as well as control and sync FET applications.

  8. What is the package type of the CSD17577Q3AT?

    The package type is a compact SON 3.3 mm × 3.3 mm.

  9. What is the maximum pulsed drain current rating?

    The maximum pulsed drain current rating is 239 A for pulse durations ≤100 μs and duty cycles ≤1%.

  10. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is typically 55°C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2310 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 53W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (3x3.3)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$1.39
161

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD17577Q3AT CSD17577Q5AT CSD17579Q3AT CSD17578Q3AT CSD17577Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta) 60A (Ta) 20A (Ta) 20A (Ta) 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 16A, 10V 4.2mOhm @ 18A, 10V 10.2mOhm @ 8A, 10V 7.3mOhm @ 10A, 10V 4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.8V @ 250µA 1.9V @ 250µA 1.9V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 35 nC @ 10 V 15 nC @ 10 V 22.2 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2310 pF @ 15 V 2310 pF @ 15 V 998 pF @ 15 V 1590 pF @ 15 V 2310 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 2.8W (Ta), 53W (Tc) 3W (Ta), 53W (Tc) 3.2W (Ta), 29W (Tc) 3.2W (Ta), 37W (Tc) 2.8W (Ta), 53W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (3x3.3) 8-VSONP (5x6) 8-VSONP (3x3.3) 8-VSONP (3x3.3) 8-VSONP (3x3.3)
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET

Related Product By Brand

ADS8598HIPMR
ADS8598HIPMR
Texas Instruments
IC ADC 18BIT SAR 64LQFP
DS90LV048ATMTCX/NOPB
DS90LV048ATMTCX/NOPB
Texas Instruments
IC RECEIVER 0/4 16TSSOP
DS34LV86TMX
DS34LV86TMX
Texas Instruments
IC RECEIVER 0/4 16SOIC
INA240A3PWR
INA240A3PWR
Texas Instruments
IC CURR SENSE 1 CIRCUIT 8TSSOP
TLC072IDGNR
TLC072IDGNR
Texas Instruments
IC OPAMP GP 2 CIRCUIT 8HVSSOP
SN74LVC2G240DCUR
SN74LVC2G240DCUR
Texas Instruments
IC BUFFER INVERT 5.5V 8VSSOP
SN74LVC1G14YZVR
SN74LVC1G14YZVR
Texas Instruments
IC INVERT SCHMITT 1CH 1IN 4DSBGA
CD4093BMT
CD4093BMT
Texas Instruments
IC GATE NAND 4CH 2-INP 14SOIC
TPS26610DDFR
TPS26610DDFR
Texas Instruments
50-V, UNIVERSAL 4-20-MA, 20-MA C
LM20242MHX/NOPB
LM20242MHX/NOPB
Texas Instruments
IC REG BUCK ADJ 2A 20HTSSOP
LP2951ACN/NOPB
LP2951ACN/NOPB
Texas Instruments
IC REG LIN POS ADJ 100MA 8DIP
SN74AC14NS
SN74AC14NS
Texas Instruments
INVERTER, AC SERIES, 1-FUNC, 1-I