CSD17577Q3AT
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Texas Instruments CSD17577Q3AT

Manufacturer No:
CSD17577Q3AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 35A 8VSON
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The CSD17577Q3AT is a 30 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize resistance in power conversion applications, making it highly efficient for various high-power needs. It features a compact SON 3.3 mm × 3.3 mm package, which is Pb-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDS - Drain-to-Source Voltage VGS = 0 V, ID = 250 μA - 30 - V
VGS - Gate-to-Source Voltage - - ±20 - V
ID - Continuous Drain Current (Package limited) TC = 25°C - 35 - A
ID - Continuous Drain Current (Silicon limited) TC = 25°C - 83 - A
IDM - Pulsed Drain Current Pulse duration ≤100 μs, duty cycle ≤1% - 239 - A
RDS(on) - Drain-to-Source On-Resistance VGS = 10 V, ID = 16 A 4.0 4.8 - mΩ
VGS(th) - Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.1 1.4 1.8 V
Qg - Gate Charge Total (4.5 V) VGS = 4.5 V 13 17 - nC
Qgd - Gate Charge Gate-to-Drain VDS = 15 V, ID = 16 A 2.5 2.8 - nC
TJ - Operating Junction Temperature - -55 - 150 °C

Key Features

  • Low Qg and Qgd for efficient switching
  • Low thermal resistance
  • Avalanche rated for robust operation
  • Pb-free, RoHS compliant, and halogen-free
  • Compact SON 3.3 mm × 3.3 mm package
  • Optimized for control and sync FET applications

Applications

  • Point-of-Load synchronous buck converters in networking, telecom, and computing systems
  • Control and sync FET applications

Q & A

  1. What is the maximum drain-to-source voltage of the CSD17577Q3AT?

    The maximum drain-to-source voltage is 30 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current rating is 35 A for the package and 83 A for the silicon.

  3. What is the typical on-state resistance at VGS = 10 V and ID = 16 A?

    The typical on-state resistance is 4.8 mΩ.

  4. What are the operating junction temperature limits?

    The operating junction temperature limits are from -55°C to 150°C.

  5. Is the CSD17577Q3AT Pb-free and RoHS compliant?

    Yes, it is Pb-free, RoHS compliant, and halogen-free.

  6. What is the gate charge total at VGS = 4.5 V?

    The gate charge total at VGS = 4.5 V is typically 17 nC.

  7. What are the typical applications of the CSD17577Q3AT?

    Typical applications include point-of-load synchronous buck converters in networking, telecom, and computing systems, as well as control and sync FET applications.

  8. What is the package type of the CSD17577Q3AT?

    The package type is a compact SON 3.3 mm × 3.3 mm.

  9. What is the maximum pulsed drain current rating?

    The maximum pulsed drain current rating is 239 A for pulse durations ≤100 μs and duty cycles ≤1%.

  10. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is typically 55°C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2310 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 53W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number CSD17577Q3AT CSD17577Q5AT CSD17579Q3AT CSD17578Q3AT CSD17577Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta) 60A (Ta) 20A (Ta) 20A (Ta) 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 16A, 10V 4.2mOhm @ 18A, 10V 10.2mOhm @ 8A, 10V 7.3mOhm @ 10A, 10V 4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.8V @ 250µA 1.9V @ 250µA 1.9V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 35 nC @ 10 V 15 nC @ 10 V 22.2 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2310 pF @ 15 V 2310 pF @ 15 V 998 pF @ 15 V 1590 pF @ 15 V 2310 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 2.8W (Ta), 53W (Tc) 3W (Ta), 53W (Tc) 3.2W (Ta), 29W (Tc) 3.2W (Ta), 37W (Tc) 2.8W (Ta), 53W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (3x3.3) 8-VSONP (5x6) 8-VSONP (3x3.3) 8-VSONP (3x3.3) 8-VSONP (3x3.3)
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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