CSD17577Q3AT
  • Share:

Texas Instruments CSD17577Q3AT

Manufacturer No:
CSD17577Q3AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 35A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17577Q3AT is a 30 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize resistance in power conversion applications, making it highly efficient for various high-power needs. It features a compact SON 3.3 mm × 3.3 mm package, which is Pb-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDS - Drain-to-Source Voltage VGS = 0 V, ID = 250 μA - 30 - V
VGS - Gate-to-Source Voltage - - ±20 - V
ID - Continuous Drain Current (Package limited) TC = 25°C - 35 - A
ID - Continuous Drain Current (Silicon limited) TC = 25°C - 83 - A
IDM - Pulsed Drain Current Pulse duration ≤100 μs, duty cycle ≤1% - 239 - A
RDS(on) - Drain-to-Source On-Resistance VGS = 10 V, ID = 16 A 4.0 4.8 - mΩ
VGS(th) - Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.1 1.4 1.8 V
Qg - Gate Charge Total (4.5 V) VGS = 4.5 V 13 17 - nC
Qgd - Gate Charge Gate-to-Drain VDS = 15 V, ID = 16 A 2.5 2.8 - nC
TJ - Operating Junction Temperature - -55 - 150 °C

Key Features

  • Low Qg and Qgd for efficient switching
  • Low thermal resistance
  • Avalanche rated for robust operation
  • Pb-free, RoHS compliant, and halogen-free
  • Compact SON 3.3 mm × 3.3 mm package
  • Optimized for control and sync FET applications

Applications

  • Point-of-Load synchronous buck converters in networking, telecom, and computing systems
  • Control and sync FET applications

Q & A

  1. What is the maximum drain-to-source voltage of the CSD17577Q3AT?

    The maximum drain-to-source voltage is 30 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current rating is 35 A for the package and 83 A for the silicon.

  3. What is the typical on-state resistance at VGS = 10 V and ID = 16 A?

    The typical on-state resistance is 4.8 mΩ.

  4. What are the operating junction temperature limits?

    The operating junction temperature limits are from -55°C to 150°C.

  5. Is the CSD17577Q3AT Pb-free and RoHS compliant?

    Yes, it is Pb-free, RoHS compliant, and halogen-free.

  6. What is the gate charge total at VGS = 4.5 V?

    The gate charge total at VGS = 4.5 V is typically 17 nC.

  7. What are the typical applications of the CSD17577Q3AT?

    Typical applications include point-of-load synchronous buck converters in networking, telecom, and computing systems, as well as control and sync FET applications.

  8. What is the package type of the CSD17577Q3AT?

    The package type is a compact SON 3.3 mm × 3.3 mm.

  9. What is the maximum pulsed drain current rating?

    The maximum pulsed drain current rating is 239 A for pulse durations ≤100 μs and duty cycles ≤1%.

  10. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is typically 55°C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2310 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 53W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (3x3.3)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$1.39
161

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD17577Q3AT CSD17577Q5AT CSD17579Q3AT CSD17578Q3AT CSD17577Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta) 60A (Ta) 20A (Ta) 20A (Ta) 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 16A, 10V 4.2mOhm @ 18A, 10V 10.2mOhm @ 8A, 10V 7.3mOhm @ 10A, 10V 4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.8V @ 250µA 1.9V @ 250µA 1.9V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 35 nC @ 10 V 15 nC @ 10 V 22.2 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2310 pF @ 15 V 2310 pF @ 15 V 998 pF @ 15 V 1590 pF @ 15 V 2310 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 2.8W (Ta), 53W (Tc) 3W (Ta), 53W (Tc) 3.2W (Ta), 29W (Tc) 3.2W (Ta), 37W (Tc) 2.8W (Ta), 53W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (3x3.3) 8-VSONP (5x6) 8-VSONP (3x3.3) 8-VSONP (3x3.3) 8-VSONP (3x3.3)
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

ADC128S022CIMT/NOPB
ADC128S022CIMT/NOPB
Texas Instruments
IC ADC 12BIT SAR 16TSSOP
TLV2548QDWRG4
TLV2548QDWRG4
Texas Instruments
IC ADC 12BIT SAR 20SOIC
DAC8568IDPWR
DAC8568IDPWR
Texas Instruments
IC DAC 16BIT V-OUT 16TSSOP
TMS320DM642AGNZ7
TMS320DM642AGNZ7
Texas Instruments
IC FIXED-POINT DSP 548-FCBGA
TMS320C5421GGUR200
TMS320C5421GGUR200
Texas Instruments
IC DGTL SIGNL PROCESSOR 144-BGA
MAX3232EIDBE4
MAX3232EIDBE4
Texas Instruments
IC TRANSCEIVER FULL 2/2 16SSOP
LT1013DID
LT1013DID
Texas Instruments
IC OPAMP GP 2 CIRCUIT 8SOIC
SN74LVC2G240DCUR
SN74LVC2G240DCUR
Texas Instruments
IC BUFFER INVERT 5.5V 8VSSOP
SN74LVC1G97DBVRG4
SN74LVC1G97DBVRG4
Texas Instruments
IC CONFIG MULTI FUNCTION SOT23-6
SN74LS151NE4
SN74LS151NE4
Texas Instruments
SN74LS151 8-LINE TO 1-LINE DATA
TPS7A7100RGWT
TPS7A7100RGWT
Texas Instruments
IC REG LIN POS ADJ 1A 20VQFN
ISO7641FCDWR
ISO7641FCDWR
Texas Instruments
DGTL ISO 2500VRMS 4CH GP 16SOIC