Overview
The CSD17579Q3AT is a high-performance N-Channel MOSFET produced by Texas Instruments, a leading manufacturer in the semiconductor industry. This MOSFET is part of the NexFET series, known for its efficiency and reliability in power management applications. Designed for surface-mount technology (SMD/SMT), the CSD17579Q3AT is housed in a compact VSONP-8 package, making it suitable for space-constrained designs. Its primary market includes power electronics, automotive systems, and industrial automation, where low on-resistance and high current handling are critical.
Key Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Vds (Drain-Source Voltage) | 30 | V | Maximum breakdown voltage |
| Id (Continuous Drain Current) | 20 | A | Maximum continuous current |
| Rds On (Drain-Source On-Resistance) | 11.8 | mOhms | Typical value |
| Vgs th (Gate-Source Threshold Voltage) | 1.5 | V | Minimum threshold |
| Vgs (Gate-Source Voltage) | ±20 | V | Maximum allowable voltage |
| Qg (Gate Charge) | 5.3 | nC | Total gate charge |
| Operating Temperature Range | -55 to +150 | °C | Wide temperature range |
| Pd (Power Dissipation) | 29 | W | Maximum power dissipation |
| Configuration | Single | - | Single N-Channel MOSFET |
| Package | VSONP-8 | - | Surface-mount package |
Key Features
- Low on-resistance (11.8 mOhms) for reduced power loss and improved efficiency.
- High current handling capability (20 A) suitable for demanding applications.
- Compact VSONP-8 package for space-constrained designs.
- Wide operating temperature range (-55°C to +150°C) for versatility in harsh environments.
- Fast switching characteristics with low gate charge (5.3 nC) and short rise/fall times.
Applications
The CSD17579Q3AT is widely used in various industries due to its robust performance. In automotive electronics, it is employed in power management systems, motor control, and battery management. In industrial automation, it is utilized in power supplies, motor drives, and inverters. Additionally, its compact size and efficiency make it ideal for consumer electronics, such as portable devices and USB power delivery systems. Its ability to handle high currents and operate in extreme temperatures ensures reliability in critical applications.
Q & A
1. What is the maximum drain-source voltage (Vds) for the CSD17579Q3AT?
The maximum drain-source voltage is 30 V.
2. What is the typical on-resistance (Rds On) of this MOSFET?
The typical on-resistance is 11.8 mOhms.
3. Can the CSD17579Q3AT operate in high-temperature environments?
Yes, it can operate in temperatures ranging from -55°C to +150°C.
4. What is the maximum continuous drain current (Id) supported?
The maximum continuous drain current is 20 A.
5. What is the gate charge (Qg) of this MOSFET?
The gate charge is 5.3 nC.
6. Is the CSD17579Q3AT suitable for automotive applications?
Yes, it is widely used in automotive power management and motor control systems.
7. What is the package type of the CSD17579Q3AT?
It comes in a VSONP-8 surface-mount package.
8. What is the gate-source threshold voltage (Vgs th)?
The gate-source threshold voltage is 1.5 V.
9. How does the CSD17579Q3AT perform in high-frequency switching applications?
Its low gate charge and fast rise/fall times make it suitable for high-frequency switching.
10. What is the power dissipation (Pd) rating of this MOSFET?
The maximum power dissipation is 29 W.
