CSD17382F4T
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Texas Instruments CSD17382F4T

Manufacturer No:
CSD17382F4T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 2.3A 3PICOSTAR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17382F4T is a 30V, 54mΩ N-channel FemtoFET™ MOSFET developed by Texas Instruments. This component is designed to minimize space usage in handheld and mobile applications, offering a significant reduction in package size compared to standard small-signal MOSFETs. Its compact design and efficient performance make it ideal for space-constrained applications, targeting industries such as consumer electronics and portable devices.

Key Specifications

ParameterValueUnitNotes
VDS (Drain-Source Voltage)30V
RDS(on) (Drain-Source On-Resistance)54VGS=8.0V
Qg (Total Gate Charge)2.1nCVGS=4.5V
Qgd (Gate-Drain Charge)0.63nC
VGS(th) (Threshold Voltage)0.9V
ID (Continuous Drain Current)2.3A
IDM (Pulsed Drain Current)14.8A
PackageFemto (0402)1.0mm × 0.6mm

Key Features

  • Ultra-compact FemtoFET™ package, reducing space by at least 60% compared to standard MOSFETs.
  • Low RDS(on) for enhanced power efficiency.
  • Optimized for handheld and mobile applications.
  • Integrated ESD protection for improved reliability.

Applications

The CSD17382F4T is widely used in portable and handheld devices, such as smartphones, tablets, and wearable technology. Its small size and high efficiency also make it suitable for power management in consumer electronics and industrial applications where space and energy efficiency are critical.

Q & A

1. What is the maximum drain-source voltage for the CSD17382F4T?

The maximum drain-source voltage (VDS) is 30V.

2. What is the typical RDS(on) at VGS=4.5V?

The typical RDS(on) is 56mΩ at VGS=4.5V.

3. What is the total gate charge (Qg) at VGS=4.5V?

The total gate charge is 2.1nC at VGS=4.5V.

4. What is the threshold voltage (VGS(th)) of the CSD17382F4T?

The threshold voltage is 0.9V.

5. What is the continuous drain current (ID) rating?

The continuous drain current is rated at 2.3A.

6. What is the pulsed drain current (IDM) rating?

The pulsed drain current is rated at 14.8A.

7. What is the package size of the CSD17382F4T?

The package size is 1.0mm × 0.6mm in the Femto (0402) format.

8. Is the CSD17382F4T suitable for handheld devices?

Yes, it is specifically optimized for handheld and mobile applications.

9. Does the CSD17382F4T include ESD protection?

Yes, it features integrated ESD protection for enhanced reliability.

10. What industries benefit from using the CSD17382F4T?

Industries such as consumer electronics, portable devices, and industrial applications benefit from its compact design and efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Rds On (Max) @ Id, Vgs:64mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.7 nC @ 4.5 V
Vgs (Max):10V
Input Capacitance (Ciss) (Max) @ Vds:347 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
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Similar Products

Part Number CSD17382F4T CSD17381F4T CSD17382F4
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 3.1A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V 1.8V, 4.5V 1.8V, 8V
Rds On (Max) @ Id, Vgs 64mOhm @ 500mA, 8V 109mOhm @ 500mA, 8V 64mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.1V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7 nC @ 4.5 V 1.35 nC @ 4.5 V 2.7 nC @ 4.5 V
Vgs (Max) 10V 12V 10V
Input Capacitance (Ciss) (Max) @ Vds 347 pF @ 15 V 195 pF @ 15 V 347 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN 3-XFDFN

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