CSD17382F4
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Texas Instruments CSD17382F4

Manufacturer No:
CSD17382F4
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 2.3A 3PICOSTAR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17382F4 is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this component is part of the NexFET™ Power MOSFET family, known for its low on-resistance and high efficiency. The CSD17382F4 is particularly suitable for applications requiring high switching speeds and low power losses, such as DC-DC converters, motor drives, and power supplies. Its compact package and robust performance make it an ideal choice for modern electronic designs.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30VMaximum
Continuous Drain Current (ID)45AAt TC = 25°C
On-Resistance (RDS(on))1.8At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum
Power Dissipation (PD)2.5WAt TA = 25°C
Operating Junction Temperature (TJ)-55 to +150°C
PackageSON 3.3x3.3Compact design

Key Features

  • Low On-Resistance: Minimizes conduction losses for improved efficiency.
  • High Switching Speed: Ideal for high-frequency applications.
  • Compact Package: SON 3.3x3.3 package saves board space.
  • Robust Thermal Performance: Supports high power dissipation in a small form factor.
  • Wide Operating Temperature Range: Suitable for harsh environments.

Applications

The CSD17382F4 is widely used in various power management applications, including:

  • DC-DC Converters: Enhances efficiency and reduces size.
  • Motor Drives: Provides reliable switching for motor control systems.
  • Power Supplies: Ensures stable and efficient power delivery.
  • Portable Electronics: Supports compact and energy-efficient designs.
  • Automotive Systems: Meets the demands of high-reliability automotive applications.

Q & A

1. What is the maximum drain-source voltage of the CSD17382F4?

The maximum drain-source voltage is 30V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 1.8mΩ at VGS = 10V.

3. Can the CSD17382F4 be used in high-frequency applications?

Yes, its high switching speed makes it suitable for high-frequency applications.

4. What is the operating temperature range of this component?

The operating temperature range is -55°C to +150°C.

5. What package does the CSD17382F4 come in?

It comes in a SON 3.3x3.3 package.

6. Is the CSD17382F4 suitable for automotive applications?

Yes, it is designed to meet the demands of high-reliability automotive systems.

7. What is the continuous drain current rating?

The continuous drain current is 45A at TC = 25°C.

8. How does the CSD17382F4 improve efficiency in DC-DC converters?

Its low on-resistance minimizes conduction losses, improving overall efficiency.

9. Can this MOSFET handle high power dissipation?

Yes, it supports a power dissipation of 2.5W at TA = 25°C.

10. Is the CSD17382F4 suitable for portable electronics?

Yes, its compact package and low power losses make it ideal for portable devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Rds On (Max) @ Id, Vgs:64mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.7 nC @ 4.5 V
Vgs (Max):10V
Input Capacitance (Ciss) (Max) @ Vds:347 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
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Similar Products

Part Number CSD17382F4 CSD17382F4T CSD17381F4
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 2.3A (Ta) 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V 1.8V, 8V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 64mOhm @ 500mA, 8V 64mOhm @ 500mA, 8V 109mOhm @ 500mA, 8A
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7 nC @ 4.5 V 2.7 nC @ 4.5 V 1.35 nC @ 4.5 V
Vgs (Max) 10V 10V 12V
Input Capacitance (Ciss) (Max) @ Vds 347 pF @ 15 V 347 pF @ 15 V 195 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN 3-XFDFN

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