Overview
The STW70N60DM6-4 is a high-voltage N-channel Power MOSFET manufactured by STMicroelectronics. It is part of the MDmesh DM6 fast-recovery diode series, known for its enhanced performance compared to previous generations. This MOSFET features a drain-source voltage (VDS) of 600 V, a typical on-resistance (RDS(on)) of 36 mΩ, and a continuous drain current (ID) of 62 A. The device is packaged in a TO247-4 package, which includes an additional driving source pin to enhance switching performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STW70N60DM6-4 | |
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (On-State Resistance) | 36 (typ), 42 (max) | mΩ |
| ID (Continuous Drain Current) | 62 A (at TC = 25 °C), 39 A (at TC = 100 °C) | A |
| IDM (Pulsed Drain Current) | 220 | A |
| VGS (Gate-Source Voltage) | ±25 | V |
| PTOT (Total Power Dissipation) | 390 | W |
| TJ (Operating Junction Temperature) | -55 to 150 | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 0.32 | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 50 | °C/W |
Key Features
- Fast-recovery body diode with low recovery charge (Qrr) and recovery time (trr).
- Lower RDS(on) per area compared to previous generations, enhancing switching efficiency.
- Low gate charge, input capacitance, and resistance, contributing to high-speed switching.
- 100% avalanche tested for reliability.
- Extremely high dv/dt ruggedness and Zener-protected for robust operation.
- Excellent switching performance thanks to the extra driving source pin in the TO247-4 package.
Applications
- Switching applications, including high-frequency switching and power control.
- High-efficiency bridge topologies and ZVS phase-shift converters.
Q & A
- What is the maximum drain-source voltage (VDS) of the STW70N60DM6-4 MOSFET?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STW70N60DM6-4?
The typical on-resistance (RDS(on)) is 36 mΩ, with a maximum of 42 mΩ.
- What is the continuous drain current (ID) rating of the STW70N60DM6-4 at 25 °C and 100 °C?
The continuous drain current (ID) is 62 A at 25 °C and 39 A at 100 °C.
- What is the maximum gate-source voltage (VGS) for the STW70N60DM6-4?
The maximum gate-source voltage (VGS) is ±25 V.
- What are the thermal resistance values for junction-to-case (RthJC) and junction-to-ambient (RthJA)?
The thermal resistance for junction-to-case (RthJC) is 0.32 °C/W, and for junction-to-ambient (RthJA) is 50 °C/W.
- What are the key features of the STW70N60DM6-4 MOSFET?
The key features include a fast-recovery body diode, lower RDS(on) per area, low gate charge and input capacitance, 100% avalanche testing, high dv/dt ruggedness, and Zener protection.
- In what package is the STW70N60DM6-4 MOSFET available?
The STW70N60DM6-4 MOSFET is available in a TO247-4 package.
- What are the typical applications for the STW70N60DM6-4 MOSFET?
The typical applications include switching applications, high-frequency switching, power control, high-efficiency bridge topologies, and ZVS phase-shift converters.
- Is the STW70N60DM6-4 MOSFET RoHS compliant?
Yes, the STW70N60DM6-4 MOSFET is RoHS compliant and comes in an Ecopack2 package.
- What is the operating junction temperature range for the STW70N60DM6-4 MOSFET?
The operating junction temperature range is -55 to 150 °C.
