STW45NM60
  • Share:

STMicroelectronics STW45NM60

Manufacturer No:
STW45NM60
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 45A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW45NM60 is a high-performance N-Channel power MOSFET produced by STMicroelectronics. It features the advanced MDmesh™ technology, which combines the Multiple Drain process with the PowerMESH™ horizontal structure. This technology enhances the device's electrical performance, particularly in terms of on-resistance and switching characteristics. The STW45NM60 is packaged in a TO-247-3 through-hole configuration, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
ID (Drain Current)45 A (Tc)
RDS(on) (On-Resistance)110 mΩ @ 22.5 A, 10 V
PD (Power Dissipation)417 W (Tc)
VGS(th) (Threshold Voltage)5 V @ 250 μA
PackageTO-247-3

Key Features

  • Advanced MDmesh™ technology for improved electrical performance.
  • Low on-resistance (RDS(on)) of 110 mΩ @ 22.5 A, 10 V.
  • High drain current capability of 45 A (Tc).
  • High power dissipation of 417 W (Tc).
  • TO-247-3 through-hole package for robust mounting.
  • Compliance with RoHS standards.

Applications

  • High-power switching applications.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial and automotive systems requiring high reliability and performance.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STW45NM60?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the maximum drain current of the STW45NM60?
    The maximum drain current (ID) is 45 A (Tc).
  3. What is the on-resistance of the STW45NM60?
    The on-resistance (RDS(on)) is 110 mΩ @ 22.5 A, 10 V.
  4. What is the power dissipation capability of the STW45NM60?
    The power dissipation (PD) is 417 W (Tc).
  5. What package type is the STW45NM60 available in?
    The STW45NM60 is available in a TO-247-3 through-hole package.
  6. Is the STW45NM60 RoHS compliant?
    Yes, the STW45NM60 is RoHS compliant.
  7. What are some typical applications for the STW45NM60?
    Typical applications include high-power switching, power supplies, motor control, industrial and automotive systems, and renewable energy systems.
  8. What technology does the STW45NM60 use?
    The STW45NM60 uses the advanced MDmesh™ technology.
  9. Where can I find detailed specifications for the STW45NM60?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser Electronics.
  10. What is the threshold voltage of the STW45NM60?
    The threshold voltage (VGS(th)) is 5 V @ 250 μA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:134 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):417W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$14.32
35

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW45NM60 STW45NM50
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 500 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 22.5A, 10V 100mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V 117 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V 3700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 417W (Tc) 417W (Tc)
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN