Overview
The STW45NM50 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the multiple drain process with the company's PowerMESH™ horizontal layout, resulting in a device with extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The STW45NM50 is packaged in a TO-247 package and is designed for high-performance switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 500 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 0.08 (typ.), 0.1 (max.) | Ω |
| ID (Drain Current, continuous at TC = 25 °C) | 45 | A |
| ID (Drain Current, continuous at TC = 100 °C) | 28.4 | A |
| IDM (Drain Current, pulsed) | 180 | A |
| PTOT (Total Dissipation at TC = 25 °C) | 390 | W |
| Tj (Operating Junction Temperature Range) | -55 to 150 | °C |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| VGS (Gate-Source Voltage) | ±30 | V |
| Rthj-case (Thermal Resistance Junction-Case) | 0.32 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 30 | °C/W |
Key Features
- 100% avalanche tested
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
- MDmesh™ technology for superior dynamic performance
- TO-247 package with ECOPACK® environmental compliance
Applications
The STW45NM50 is primarily designed for high-performance switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- High-frequency switching circuits
- Aerospace and industrial power systems
Q & A
- What is the maximum drain-source voltage of the STW45NM50?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance of the STW45NM50?
The typical static drain-source on-resistance (RDS(on)) is 0.08 Ω.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 45 A.
- What is the storage temperature range for the STW45NM50?
The storage temperature range (Tstg) is -55 to 150 °C.
- What is the thermal resistance junction-case for the STW45NM50?
The thermal resistance junction-case (Rthj-case) is 0.32 °C/W.
- Is the STW45NM50 RoHS compliant?
- What are the key features of the MDmesh™ technology used in the STW45NM50?
The MDmesh™ technology offers low on-resistance, high dv/dt, excellent avalanche characteristics, and low input capacitance and gate charge.
- What are the typical switching times for the STW45NM50?
The typical turn-on delay time (td(on)) is 29.1 ns, rise time (tr) is 73.6 ns, off-voltage rise time (tr(Voff)) is 20.8 ns, fall time (tf) is 58.3 ns, and cross-over time (tc) is 67.6 ns.
- What is the maximum pulse current for the STW45NM50?
The maximum pulse current (IDM) is 180 A.
- What are the primary applications of the STW45NM50?
The primary applications include power supplies, motor control, high-frequency switching circuits, and aerospace and industrial power systems.
