STW45N65M5
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STMicroelectronics STW45N65M5

Manufacturer No:
STW45N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 35A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW45N65M5 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the MDmesh V family and is known for its excellent switching performance and robust electrical characteristics. It is designed to operate in high-power applications, offering a combination of low on-resistance and high voltage ratings.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
ID (Drain Current)35 A (typical at TC = 25°C)
RDS(on) (On-Resistance)0.067 Ω (typical at VGS = 10 V, ID = 20 A)
PD (Power Dissipation)210 W
PackageD2PAK, TO247-3
Avalanche Capability100% avalanche tested

Key Features

  • Worldwide best RDS(on) area, ensuring low on-resistance and high efficiency.
  • Higher VDS rating and high dv/dt capability, making it suitable for high-voltage applications.
  • Excellent switching performance, contributing to more efficient and compact SMPS (Switch-Mode Power Supply) designs.
  • 100% avalanche tested, ensuring robustness against transient conditions.

Applications

The STW45N65M5 is ideal for various high-power applications, including:

  • Switch-Mode Power Supplies (SMPS)
  • Motor drives and control systems
  • Power factor correction (PFC) circuits
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW45N65M5?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance (RDS(on)) of the STW45N65M5?
    The typical on-resistance (RDS(on)) is 0.067 Ω at VGS = 10 V and ID = 20 A.
  3. What is the maximum drain current (ID) of the STW45N65M5?
    The maximum drain current (ID) is 35 A (typical at TC = 25°C).
  4. What package options are available for the STW45N65M5?
    The STW45N65M5 is available in D2PAK and TO247-3 packages.
  5. Is the STW45N65M5 avalanche tested?
    Yes, the STW45N65M5 is 100% avalanche tested.
  6. What are some common applications for the STW45N65M5?
    Common applications include SMPS, motor drives, power factor correction circuits, and high-frequency switching circuits.
  7. What is the power dissipation (PD) of the STW45N65M5?
    The power dissipation (PD) is 210 W.
  8. Does the STW45N65M5 have high dv/dt capability?
    Yes, the STW45N65M5 has high dv/dt capability.
  9. What family does the STW45N65M5 belong to?
    The STW45N65M5 belongs to the MDmesh V family.
  10. Where can I find detailed specifications for the STW45N65M5?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:78mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3375 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STW45N65M5
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STFW45N65M5
MOSFET N-CH 650V 35A ISOWATT

Similar Products

Part Number STW45N65M5 STWA45N65M5 STW35N65M5 STW42N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc) 27A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 19.5A, 10V 78mOhm @ 17.5A, 10V 98mOhm @ 13.5A, 10V 79mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 82 nC @ 10 V 83 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3375 pF @ 100 V 3470 pF @ 100 V 3750 pF @ 100 V 4650 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 210W (Tc) 210W (Tc) 160W (Tc) 190W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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