STWA45N65M5
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STMicroelectronics STWA45N65M5

Manufacturer No:
STWA45N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 35A TO247
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STWA45N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making it particularly suitable for applications requiring superior power density and outstanding efficiency. The STWA45N65M5 is available in the TO-247 long leads package, which enhances its thermal and electrical performance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 650 V
Drain Current (ID) - Continuous at TC = 25 °C 35 A
Drain Current (ID) - Continuous at TC = 100 °C 22 A
Pulsed Drain Current (IDM) 140 A
Gate-Source Voltage (VGS) ± 25 V
Static Drain-Source On-Resistance (RDS(on)) 0.067 (typ.), 0.078 (max.) Ω
Gate Threshold Voltage (VGS(th)) 3 to 5 V
Total Dissipation at TC = 25 °C 210 W
Max. Operating Junction Temperature (Tj) 150 °C
Thermal Resistance Junction-Case (Rthj-case) 0.6 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 50 °C/W

Key Features

  • Worldwide best RDS(on) * area, ensuring low on-resistance.
  • Higher VDSS rating and high dv/dt capability, enhancing switching performance.
  • Excellent switching performance, suitable for high-frequency applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Available in TO-247 long leads package, which improves thermal and electrical performance.
  • ECOPACK® compliant, meeting environmental requirements.

Applications

  • Switching applications, including power supplies, motor drives, and high-frequency converters.
  • High-power density and efficiency requirements, such as in industrial and automotive systems.
  • Applications needing high dv/dt capability and low on-resistance, such as in power factor correction and DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STWA45N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the continuous drain current (ID) at TC = 25 °C?

    The continuous drain current (ID) at TC = 25 °C is 35 A.

  3. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is 0.067 Ω.

  4. What is the maximum operating junction temperature (Tj) of the STWA45N65M5?

    The maximum operating junction temperature (Tj) is 150 °C.

  5. What are the key features of the STWA45N65M5?

    The key features include worldwide best RDS(on) * area, higher VDSS rating, high dv/dt capability, excellent switching performance, and 100% avalanche testing.

  6. In which package is the STWA45N65M5 available?

    The STWA45N65M5 is available in the TO-247 long leads package.

  7. What are the typical applications of the STWA45N65M5?

    The typical applications include switching applications, power supplies, motor drives, and high-frequency converters.

  8. Is the STWA45N65M5 environmentally compliant?

    Yes, the STWA45N65M5 is ECOPACK® compliant, meeting environmental requirements.

  9. What is the thermal resistance junction-case (Rthj-case) of the STWA45N65M5?

    The thermal resistance junction-case (Rthj-case) is 0.6 °C/W.

  10. What is the maximum pulsed drain current (IDM) of the STWA45N65M5?

    The maximum pulsed drain current (IDM) is 140 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:78mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3470 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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Same Series
STW45N65M5
STW45N65M5
MOSFET N-CH 650V 35A TO247
STFW45N65M5
STFW45N65M5
MOSFET N-CH 650V 35A ISOWATT

Similar Products

Part Number STWA45N65M5 STW45N65M5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 17.5A, 10V 78mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3470 pF @ 100 V 3375 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 210W (Tc) 210W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 TO-247-3
Package / Case TO-247-3 TO-247-3

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