STWA45N65M5
  • Share:

STMicroelectronics STWA45N65M5

Manufacturer No:
STWA45N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 35A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STWA45N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making it particularly suitable for applications requiring superior power density and outstanding efficiency. The STWA45N65M5 is available in the TO-247 long leads package, which enhances its thermal and electrical performance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 650 V
Drain Current (ID) - Continuous at TC = 25 °C 35 A
Drain Current (ID) - Continuous at TC = 100 °C 22 A
Pulsed Drain Current (IDM) 140 A
Gate-Source Voltage (VGS) ± 25 V
Static Drain-Source On-Resistance (RDS(on)) 0.067 (typ.), 0.078 (max.) Ω
Gate Threshold Voltage (VGS(th)) 3 to 5 V
Total Dissipation at TC = 25 °C 210 W
Max. Operating Junction Temperature (Tj) 150 °C
Thermal Resistance Junction-Case (Rthj-case) 0.6 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 50 °C/W

Key Features

  • Worldwide best RDS(on) * area, ensuring low on-resistance.
  • Higher VDSS rating and high dv/dt capability, enhancing switching performance.
  • Excellent switching performance, suitable for high-frequency applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Available in TO-247 long leads package, which improves thermal and electrical performance.
  • ECOPACK® compliant, meeting environmental requirements.

Applications

  • Switching applications, including power supplies, motor drives, and high-frequency converters.
  • High-power density and efficiency requirements, such as in industrial and automotive systems.
  • Applications needing high dv/dt capability and low on-resistance, such as in power factor correction and DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STWA45N65M5?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the continuous drain current (ID) at TC = 25 °C?

    The continuous drain current (ID) at TC = 25 °C is 35 A.

  3. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is 0.067 Ω.

  4. What is the maximum operating junction temperature (Tj) of the STWA45N65M5?

    The maximum operating junction temperature (Tj) is 150 °C.

  5. What are the key features of the STWA45N65M5?

    The key features include worldwide best RDS(on) * area, higher VDSS rating, high dv/dt capability, excellent switching performance, and 100% avalanche testing.

  6. In which package is the STWA45N65M5 available?

    The STWA45N65M5 is available in the TO-247 long leads package.

  7. What are the typical applications of the STWA45N65M5?

    The typical applications include switching applications, power supplies, motor drives, and high-frequency converters.

  8. Is the STWA45N65M5 environmentally compliant?

    Yes, the STWA45N65M5 is ECOPACK® compliant, meeting environmental requirements.

  9. What is the thermal resistance junction-case (Rthj-case) of the STWA45N65M5?

    The thermal resistance junction-case (Rthj-case) is 0.6 °C/W.

  10. What is the maximum pulsed drain current (IDM) of the STWA45N65M5?

    The maximum pulsed drain current (IDM) is 140 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:78mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3470 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$9.08
63

Please send RFQ , we will respond immediately.

Same Series
STW45N65M5
STW45N65M5
MOSFET N-CH 650V 35A TO247
STFW45N65M5
STFW45N65M5
MOSFET N-CH 650V 35A ISOWATT

Similar Products

Part Number STWA45N65M5 STW45N65M5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 17.5A, 10V 78mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3470 pF @ 100 V 3375 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 210W (Tc) 210W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA