STW13NK100Z
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STMicroelectronics STW13NK100Z

Manufacturer No:
STW13NK100Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1000V 13A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW13NK100Z is a high-performance N-channel power MOSFET produced by STMicroelectronics. It is part of the SuperMESH™ series, which is known for its optimized strip-based PowerMESH™ layout. This design significantly reduces on-resistance and enhances dv/dt capability, making it suitable for the most demanding applications. The device is particularly notable for its high voltage and current handling capabilities, along with integrated protection features such as gate-source Zener diodes for enhanced ESD protection and voltage transient absorption.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 1000 V
Drain current (continuous) at TC = 25°C 13 A
Drain current (continuous) at TC = 100°C 8.2 A
Drain-source on resistance (RDS(on)) 0.56 - 0.70 Ω
Gate-source voltage (VGS) ±30 V
Total dissipation at TC = 25°C 350 W
Thermal resistance junction-case (Rthj-case) 0.36 °C/W
Thermal resistance junction-ambient (Rthj-a) 50 °C/W
Maximum lead temperature for soldering 300 °C
Package TO-247
Packaging Tube

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • Gate charge minimized, reducing switching losses and improving efficiency.
  • 100% avalanche tested, ensuring robustness against high energy pulses.
  • Very good manufacturing repeatibility, ensuring consistent performance across devices.
  • Very low intrinsic capacitances, which helps in reducing switching times and improving overall performance.
  • Integrated gate-source Zener diodes for enhanced ESD protection and voltage transient absorption.

Applications

The STW13NK100Z is designed for various high-power switching applications, including:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • High-voltage DC-DC converters
  • Other applications requiring high voltage and current handling capabilities

Q & A

  1. What is the maximum drain-source voltage of the STW13NK100Z?

    The maximum drain-source voltage (VDS) is 1000 V.

  2. What is the continuous drain current at 25°C and 100°C?

    The continuous drain current is 13 A at 25°C and 8.2 A at 100°C.

  3. What is the typical on-state resistance (RDS(on)) of the STW13NK100Z?

    The typical on-state resistance (RDS(on)) is between 0.56 Ω and 0.70 Ω.

  4. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±30 V.

  5. What is the total dissipation at 25°C?

    The total dissipation at 25°C is 350 W.

  6. What type of package does the STW13NK100Z come in?

    The STW13NK100Z comes in a TO-247 package and is packaged in tubes.

  7. What are the key features of the SuperMESH™ series?

    The key features include extremely high dv/dt capability, minimized gate charge, 100% avalanche testing, very good manufacturing repeatibility, and very low intrinsic capacitances.

  8. Does the STW13NK100Z have built-in protection features?

    Yes, it has integrated gate-source Zener diodes for enhanced ESD protection and voltage transient absorption.

  9. What are the typical applications for the STW13NK100Z?

    Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.

  10. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:266 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW13NK100Z STW11NK100Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 8.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 6.5A, 10V 1.38Ohm @ 4.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 150µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 266 nC @ 10 V 162 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V 3500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 350W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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