STW11NK100Z
  • Share:

STMicroelectronics STW11NK100Z

Manufacturer No:
STW11NK100Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1000V 8.3A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW11NK100Z is a high-performance N-channel power MOSFET produced by STMicroelectronics. It belongs to the SuperMESH™ series, which is optimized for extreme performance using ST's well-established strip-based PowerMESH™ layout. This transistor is designed to offer exceptional electrical characteristics, making it suitable for a wide range of high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1000 V
ID (Drain Current)8.3 A
PD (Power Dissipation)230 W
RDS(on) (On-State Resistance)1.1 Ω
PackageTO-247
Avalanche Capability100% avalanche tested
dv/dt CapabilityExtremely high
Gate ChargeMinimized

Key Features

  • Extremely high dv/dt capability, ensuring robust performance under high-frequency switching conditions.
  • Gate charge minimized, reducing switching losses and improving overall efficiency.
  • 100% avalanche tested, providing reliability and endurance in demanding applications.
  • Very good manufacturing repeatability, ensuring consistent performance across different units.
  • Very low intrinsic capacitance, which helps in reducing switching times and improving the transistor's response to high-frequency signals.

Applications

The STW11NK100Z is designed for use in various high-power applications, including but not limited to:

  • Switch-mode power supplies (SMPS) and DC-DC converters.
  • Motor control and drive systems.
  • Power factor correction (PFC) circuits.
  • High-frequency inverters and converters.
  • Industrial and automotive power systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW11NK100Z?
    The maximum drain-source voltage (VDS) is 1000 V.
  2. What is the maximum drain current (ID) of the STW11NK100Z?
    The maximum drain current (ID) is 8.3 A.
  3. What is the power dissipation (PD) of the STW11NK100Z?
    The power dissipation (PD) is 230 W.
  4. What is the on-state resistance (RDS(on)) of the STW11NK100Z?
    The on-state resistance (RDS(on)) is 1.1 Ω.
  5. What package type is the STW11NK100Z available in?
    The STW11NK100Z is available in the TO-247 package.
  6. Is the STW11NK100Z avalanche tested?
    Yes, the STW11NK100Z is 100% avalanche tested.
  7. What is notable about the dv/dt capability of the STW11NK100Z?
    The STW11NK100Z has an extremely high dv/dt capability.
  8. How is the gate charge of the STW11NK100Z optimized?
    The gate charge of the STW11NK100Z is minimized.
  9. What is the manufacturing repeatability of the STW11NK100Z?
    The STW11NK100Z has very good manufacturing repeatability.
  10. What are some typical applications of the STW11NK100Z?
    The STW11NK100Z is used in switch-mode power supplies, motor control systems, power factor correction circuits, high-frequency inverters, and industrial and automotive power systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:8.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.38Ohm @ 4.15A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:162 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$6.79
94

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW11NK100Z STW13NK100Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.38Ohm @ 4.15A, 10V 700mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 10 V 266 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 6000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 230W (Tc) 350W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA