STW11NK100Z
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STMicroelectronics STW11NK100Z

Manufacturer No:
STW11NK100Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1000V 8.3A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW11NK100Z is a high-performance N-channel power MOSFET produced by STMicroelectronics. It belongs to the SuperMESH™ series, which is optimized for extreme performance using ST's well-established strip-based PowerMESH™ layout. This transistor is designed to offer exceptional electrical characteristics, making it suitable for a wide range of high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1000 V
ID (Drain Current)8.3 A
PD (Power Dissipation)230 W
RDS(on) (On-State Resistance)1.1 Ω
PackageTO-247
Avalanche Capability100% avalanche tested
dv/dt CapabilityExtremely high
Gate ChargeMinimized

Key Features

  • Extremely high dv/dt capability, ensuring robust performance under high-frequency switching conditions.
  • Gate charge minimized, reducing switching losses and improving overall efficiency.
  • 100% avalanche tested, providing reliability and endurance in demanding applications.
  • Very good manufacturing repeatability, ensuring consistent performance across different units.
  • Very low intrinsic capacitance, which helps in reducing switching times and improving the transistor's response to high-frequency signals.

Applications

The STW11NK100Z is designed for use in various high-power applications, including but not limited to:

  • Switch-mode power supplies (SMPS) and DC-DC converters.
  • Motor control and drive systems.
  • Power factor correction (PFC) circuits.
  • High-frequency inverters and converters.
  • Industrial and automotive power systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW11NK100Z?
    The maximum drain-source voltage (VDS) is 1000 V.
  2. What is the maximum drain current (ID) of the STW11NK100Z?
    The maximum drain current (ID) is 8.3 A.
  3. What is the power dissipation (PD) of the STW11NK100Z?
    The power dissipation (PD) is 230 W.
  4. What is the on-state resistance (RDS(on)) of the STW11NK100Z?
    The on-state resistance (RDS(on)) is 1.1 Ω.
  5. What package type is the STW11NK100Z available in?
    The STW11NK100Z is available in the TO-247 package.
  6. Is the STW11NK100Z avalanche tested?
    Yes, the STW11NK100Z is 100% avalanche tested.
  7. What is notable about the dv/dt capability of the STW11NK100Z?
    The STW11NK100Z has an extremely high dv/dt capability.
  8. How is the gate charge of the STW11NK100Z optimized?
    The gate charge of the STW11NK100Z is minimized.
  9. What is the manufacturing repeatability of the STW11NK100Z?
    The STW11NK100Z has very good manufacturing repeatability.
  10. What are some typical applications of the STW11NK100Z?
    The STW11NK100Z is used in switch-mode power supplies, motor control systems, power factor correction circuits, high-frequency inverters, and industrial and automotive power systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:8.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.38Ohm @ 4.15A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:162 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW11NK100Z STW13NK100Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.38Ohm @ 4.15A, 10V 700mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 10 V 266 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 6000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 230W (Tc) 350W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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