STS6NF20V
  • Share:

STMicroelectronics STS6NF20V

Manufacturer No:
STS6NF20V
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STS6NF20V is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET II family, known for its advanced technology that minimizes input capacitance and gate charge. This MOSFET is packaged in an SO-8 surface mount package and is designed for low gate drive requirements, making it suitable for a variety of high-efficiency applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)20V
Gate-source voltage (VGS)12V
Drain current (continuous) at T = 25°C (ID)6A
Drain current (continuous) at T = 100°C (ID)3.8A
Drain current (pulsed) (IDM)24A
Total power dissipation at T = 25°C (PTOT)2.5W
On-resistance (RDS(on)) at VGS = 2.7V30 mΩ
Thermal resistance junction-ambient (Rthj-amb)50°C/W
Storage temperature range (Tstg)-55 to 150°C
Operating junction temperature range (Tj)-55 to 150°C

Key Features

  • Ultra-low threshold gate drive: The MOSFET can be driven with a low gate voltage of 2.7V, making it suitable for low-power drive circuits.
  • Low gate charge: This feature reduces the energy required to switch the MOSFET on and off, enhancing efficiency in high-frequency applications.
  • 100% avalanche tested: Ensures the device can withstand high-energy pulses, making it reliable in demanding environments.
  • Advanced STripFET II process: Minimizes input capacitance and gate charge, improving switching performance and efficiency.

Applications

The STS6NF20V is designed for use in various high-efficiency applications, including:

  • Primary switch in advanced isolated DC-DC converters for telecom and computer systems.
  • Switching applications requiring low gate charge driving.
  • Other applications where high efficiency and low power consumption are critical.

Q & A

  1. What is the drain-source voltage rating of the STS6NF20V?
    The drain-source voltage rating is 20 V.
  2. What is the typical on-resistance of the STS6NF20V at VGS = 2.7V?
    The typical on-resistance is 30 mΩ.
  3. What is the maximum continuous drain current at T = 25°C?
    The maximum continuous drain current at T = 25°C is 6 A.
  4. What is the thermal resistance junction-ambient of the STS6NF20V?
    The thermal resistance junction-ambient is 50 °C/W.
  5. What is the storage temperature range for the STS6NF20V?
    The storage temperature range is -55 to 150 °C.
  6. What are the key features of the STS6NF20V?
    The key features include ultra-low threshold gate drive, low gate charge, 100% avalanche tested, and the advanced STripFET II process.
  7. In what package is the STS6NF20V available?
    The STS6NF20V is available in an SO-8 surface mount package.
  8. What are some typical applications for the STS6NF20V?
    Typical applications include primary switches in isolated DC-DC converters for telecom and computer systems, and other switching applications with low gate charge driving requirements.
  9. Why is the STS6NF20V suitable for high-efficiency applications?
    The STS6NF20V is suitable due to its low gate charge, ultra-low threshold gate drive, and the advanced STripFET II process that minimizes input capacitance and gate charge.
  10. Where can I find detailed specifications for the STS6NF20V?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Digi-Key and X-ON Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.95V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:11.5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.86
585

Please send RFQ , we will respond immediately.

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP