STR1P2UH7
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STMicroelectronics STR1P2UH7

Manufacturer No:
STR1P2UH7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.4A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STR1P2UH7 is a P-channel power MOSFET developed by STMicroelectronics, utilizing the advanced STripFET H7 technology. This device is designed to provide efficient power management solutions with its trench gate structure and extremely low on-resistance. It is packaged in a SOT-23 format, making it suitable for a variety of applications where space is a constraint.

Key Specifications

Parameter Value
Channel Type P-channel
Drain-Source Voltage (VDS) 20 V
On-Resistance (RDS(on)) 0.087 Ω (typ.)
Continuous Drain Current (ID) 1.4 A
Package Type SOT-23

Key Features

  • Advanced STripFET H7 technology with trench gate structure for low on-resistance.
  • High efficiency in power management applications.
  • Compact SOT-23 package for space-saving designs.
  • Low thermal resistance, enhancing thermal performance.

Applications

  • Power management in consumer electronics.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial power systems.

Q & A

  1. What is the channel type of the STR1P2UH7 MOSFET?

    The STR1P2UH7 is a P-channel MOSFET.

  2. What is the maximum drain-source voltage (VDS) of the STR1P2UH7?

    The maximum drain-source voltage is 20 V.

  3. What is the typical on-resistance (RDS(on)) of the STR1P2UH7?

    The typical on-resistance is 0.087 Ω.

  4. What is the continuous drain current (ID) of the STR1P2UH7?

    The continuous drain current is 1.4 A.

  5. In what package is the STR1P2UH7 available?

    The STR1P2UH7 is available in a SOT-23 package.

  6. What technology does the STR1P2UH7 use?

    The STR1P2UH7 uses the STripFET H7 technology.

  7. What are some common applications of the STR1P2UH7?

    Common applications include power management in consumer electronics, DC-DC converters, motor control, and automotive and industrial power systems.

  8. Why is the STR1P2UH7 considered efficient for power management?

    The STR1P2UH7 is considered efficient due to its low on-resistance and advanced STripFET H7 technology.

  9. What are the benefits of the SOT-23 package for the STR1P2UH7?

    The SOT-23 package is beneficial for its compact size, making it ideal for space-saving designs.

  10. Where can I find detailed specifications for the STR1P2UH7?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.8 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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