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STP7N60M2
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STMicroelectronics STP7N60M2

Manufacturer No:
STP7N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 5A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP7N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is characterized by its low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters. Available in TO-220 packages, the STP7N60M2 offers a robust solution for various power management applications.

Key Specifications

ParameterValue
Drain-Source Voltage (VDS)600 V
On-Resistance (RDS(on))0.86 Ω (typ.)
Drain Current (ID)5 A
PackageTO-220
Gate ChargeExtremely low
Output Capacitance (COSS)Excellent profile
Avalanche Testing100% tested
ProtectionZener-protected

Key Features

  • Low on-resistance (RDS(on)) of 0.86 Ω (typ.)
  • High drain current (ID) of 5 A
  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected for enhanced reliability
  • MDmesh™ M2 technology for improved vertical structure and strip layout

Applications

The STP7N60M2 is designed for demanding high-efficiency converter applications, including but not limited to:

  • Switching applications
  • Power management systems
  • High-efficiency DC-DC converters
  • Power supplies

Q & A

  1. What is the maximum drain-source voltage of the STP7N60M2?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STP7N60M2?
    The typical on-resistance (RDS(on)) is 0.86 Ω.
  3. What is the maximum drain current of the STP7N60M2?
    The maximum drain current (ID) is 5 A.
  4. In which package is the STP7N60M2 available?
    The STP7N60M2 is available in a TO-220 package.
  5. What technology is used in the STP7N60M2?
    The STP7N60M2 uses MDmesh™ M2 technology.
  6. Is the STP7N60M2 Zener-protected?
    Yes, the STP7N60M2 is Zener-protected.
  7. What are the key features of the STP7N60M2?
    The key features include low on-resistance, high drain current, extremely low gate charge, excellent output capacitance profile, and 100% avalanche testing.
  8. What are the typical applications of the STP7N60M2?
    The typical applications include switching applications, power management systems, and high-efficiency DC-DC converters.
  9. Is the STP7N60M2 environmentally compliant?
    Yes, the STP7N60M2 is available in ECOPACK® packages that meet environmental compliance standards.
  10. Where can I find detailed mechanical data for the STP7N60M2 package?
    Detailed mechanical data can be found in the datasheet available on the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.8 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:271 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STU7N60M2
STU7N60M2
MOSFET N-CH 600V 5A IPAK
STP7N60M2
STP7N60M2
MOSFET N-CH 600V 5A TO220

Similar Products

Part Number STP7N60M2 STP7N65M2 STP9N60M2 STP5N60M2 STP6N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 5A (Tc) 5.5A (Tc) 3.7A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.5A, 10V 1.15Ohm @ 2.5A, 10V 780mOhm @ 3A, 10V 1.4Ohm @ 1.85A, 10V 1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 10 V 9 nC @ 10 V 10 nC @ 10 V 4.5 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 271 pF @ 100 V 270 pF @ 100 V 320 pF @ 100 V 165 pF @ 100 V 232 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 45W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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