Overview
The STP5N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer high efficiency and reliability in various power switching applications. With its strip layout and improved vertical structure, the STP5N60M2 exhibits low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS @ TJmax | 650 | V |
| RDS(on) max. | 1.4 | Ω |
| ID (continuous) at TC = 25 °C | 3.5 | A |
| ID (continuous) at TC = 100 °C | 2.2 | A |
| IDM (pulsed) | 14 | A |
| VGS | ±25 | V |
| PTOT (total dissipation) at TC = 25 °C | 45 | W |
| Tstg (storage temperature range) | -55 to 150 | °C |
| Tj (operating junction temperature range) | -55 to 150 | °C |
| Rthj-case (thermal resistance junction-case max.) | 2.8 | °C/W |
| Rthj-pcb (thermal resistance junction-pcb max.) | 50 | °C/W |
| Rthj-amb (thermal resistance junction-ambient max.) | 100 | °C/W |
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Low on-resistance and optimized switching characteristics
- Available in DPAK, TO-220, and IPAK packages
- ECOPACK® compliant packages for environmental compliance
Applications
The STP5N60M2 is particularly suited for high-efficiency switching applications, including but not limited to:
- High-efficiency converters
- Power supplies
- Motor control systems
- Industrial power systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STP5N60M2?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STP5N60M2?
The typical on-resistance (RDS(on)) is 1.3 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 3.5 A.
- What are the available package types for the STP5N60M2?
The STP5N60M2 is available in DPAK, TO-220, and IPAK packages.
- What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
The thermal resistance junction-case (Rthj-case) for the TO-220 package is 2.8 °C/W.
- Is the STP5N60M2 100% avalanche tested?
- What is the gate-source voltage (VGS) range for the STP5N60M2?
The gate-source voltage (VGS) range is ±25 V.
- What is the storage temperature range for the STP5N60M2?
The storage temperature range is -55 to 150 °C.
- What are some of the key features of the MDmesh™ M2 technology used in the STP5N60M2?
The MDmesh™ M2 technology offers extremely low gate charge, excellent output capacitance (COSS) profile, and optimized switching characteristics.
- Is the STP5N60M2 environmentally compliant?
