STP14NF12FP
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STMicroelectronics STP14NF12FP

Manufacturer No:
STP14NF12FP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 120V 8.5A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP14NF12FP is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET process. This MOSFET is designed to minimize input capacitance and gate charge, making it highly suitable for applications requiring low gate drive requirements. It is particularly optimized for use as the primary switch in advanced high-efficiency isolated DC-DC converters, especially in Telecom and Computer applications.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 120 V
Gate-source voltage (VGS) ±20 V
Continuous drain current (ID) at TC = 25°C 14 A
Continuous drain current (ID) at TC = 100°C 9 A
Pulsed drain current (IDM) 56 A
Total dissipation at TC = 25°C 25 W
Static drain-source on resistance (RDS(on)) <0.18 Ω
Gate threshold voltage (VGS(th)) 2-4 V
Input capacitance (Ciss) 460 pF
Output capacitance (Coss) 70 pF
Reverse transfer capacitance (Crss) 30 pF
Total gate charge (Qg) 15.5 nC
Maximum operating junction temperature (Tj) 175 °C
Storage temperature (Tstg) -55 to 175 °C

Key Features

  • Exceptional dv/dt capability: High robustness against voltage spikes.
  • Low gate charge: Minimized input capacitance and gate charge, ideal for low gate drive requirements.
  • High efficiency: Suitable for advanced high-efficiency isolated DC-DC converters.
  • STripFET process: Unique process from STMicroelectronics enhancing performance and efficiency.
  • ECOPACK® packages: Lead-free second level interconnect, meeting environmental requirements.

Applications

  • Telecom applications: Ideal for high-efficiency DC-DC converters in telecommunications equipment.
  • Computer applications: Suitable for power management in computer systems.
  • Switching applications: General use in switching circuits where low gate charge is beneficial.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP14NF12FP?

    The maximum drain-source voltage (VDS) is 120 V.

  2. What is the continuous drain current (ID) at 25°C?

    The continuous drain current (ID) at 25°C is 14 A.

  3. What is the typical static drain-source on resistance (RDS(on))?

    The typical static drain-source on resistance (RDS(on)) is less than 0.18 Ω.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2-4 V.

  5. What are the typical input, output, and reverse transfer capacitances?

    The typical input capacitance (Ciss) is 460 pF, output capacitance (Coss) is 70 pF, and reverse transfer capacitance (Crss) is 30 pF.

  6. What is the total gate charge (Qg)?

    The total gate charge (Qg) is 15.5 nC.

  7. What is the maximum operating junction temperature (Tj)?

    The maximum operating junction temperature (Tj) is 175 °C.

  8. What are the storage temperature (Tstg) limits?

    The storage temperature (Tstg) limits are from -55 to 175 °C.

  9. What type of package does the STP14NF12FP come in?

    The STP14NF12FP comes in TO-220 and TO-220FP packages.

  10. What is the ECOPACK® feature of this MOSFET?

    The ECOPACK® feature indicates that the device has a Lead-free second level interconnect, meeting environmental requirements.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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