STP140N8F7
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STMicroelectronics STP140N8F7

Manufacturer No:
STP140N8F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 80V 90A TO220
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Payment:
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Product Introduction

Overview

The STP140N8F7 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it highly suitable for various high-performance applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)80V
Gate-source voltage (VGS)±20V
Drain current (continuous) at TC = 25 °C (ID)90A
Drain current (pulsed) (IDM)360A
Total dissipation at TC = 25 °C (PTOT)200W
Operating junction temperature (Tj)-55 to 175°C
Static drain-source on-resistance (RDS(on))3.5 - 4.3
Gate threshold voltage (VGS(th))2.5 - 4.5V
Input capacitance (Ciss)6340pF
Output capacitance (Coss)1195pF
Reverse transfer capacitance (Crss)105pF
Total gate charge (Qg)96nC

Key Features

  • Among the lowest RDS(on) on the market, with a typical value of 3.5 mΩ.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for improved EMI immunity.
  • High avalanche ruggedness.
  • Ultra-low gate charge and low on-resistance.
  • 100% avalanche tested.

Applications

The STP140N8F7 is primarily designed for switching applications, where high efficiency, low on-state resistance, and fast switching times are crucial. These include but are not limited to power supplies, motor control, and other high-power electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the STP140N8F7? The maximum drain-source voltage (VDS) is 80 V.
  2. What is the typical on-state resistance of the STP140N8F7? The typical on-state resistance (RDS(on)) is 3.5 mΩ.
  3. What is the maximum continuous drain current at 25 °C? The maximum continuous drain current (ID) at 25 °C is 90 A.
  4. What is the total dissipation at 25 °C? The total dissipation (PTOT) at 25 °C is 200 W.
  5. What is the operating junction temperature range? The operating junction temperature (Tj) range is -55 to 175 °C.
  6. What are the key features of the STP140N8F7? Key features include low RDS(on), excellent FoM, low Crss/Ciss ratio, high avalanche ruggedness, and ultra-low gate charge.
  7. What are the typical applications of the STP140N8F7? Typical applications include switching applications such as power supplies and motor control.
  8. What package type is the STP140N8F7 available in? The STP140N8F7 is available in a TO-220 package.
  9. What is the gate threshold voltage range of the STP140N8F7? The gate threshold voltage (VGS(th)) range is 2.5 to 4.5 V.
  10. What is the total gate charge of the STP140N8F7? The total gate charge (Qg) is 96 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6340 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP140N8F7 STP170N8F7 STP110N8F7 STP130N8F7 STP140N6F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Last Time Buy Last Time Buy Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 120A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 45A, 10V 3.9mOhm @ 60A, 10V 7.5mOhm @ 40A, 10V - 3.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 120 nC @ 10 V 46.8 nC @ 10 V - 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 6340 pF @ 40 V 8710 pF @ 40 V 3435 pF @ 40 V - 3100 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 250W (Tc) 170W (Tc) 205W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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