Overview
The STP140N6F7 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. It utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This design results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching. The MOSFET is packaged in a TO-220 type A package, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STP140N6F7 | |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Drain Current (ID) Continuous at Tcase = 25 °C | 80 | A |
| Drain Current (IDM) Pulsed | 320 | A |
| Total Dissipation (PTOT) at Tcase = 25 °C | 158 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.0031 (typ), 0.0035 (max) | Ω |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.95 | °C/W |
| Turn-on Delay Time (td(on)) | 24 ns | ns |
| Rise Time (tr) | 68 ns | ns |
| Turn-off Delay Time (td(off)) | 39 ns | ns |
| Fall Time (tf) | 20 ns | ns |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 0.0031 Ω and a maximum value of 0.0035 Ω.
- Excellent figure of merit (FoM) for high efficiency in switching applications.
- Low Crss/Ciss ratio for enhanced EMI immunity.
- High avalanche ruggedness, ensuring robust performance under stress conditions.
- Enhanced trench gate structure for reduced internal capacitance and gate charge, facilitating faster switching times.
Applications
- Switching applications, including high-frequency switching and power management.
- Power supplies and DC-DC converters.
- Motor control systems.
- ABS (Anti-lock Braking System) and other automotive applications.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP140N6F7 MOSFET?
The maximum drain-source voltage (VDS) is 60 V.
- What is the typical on-state resistance (RDS(on)) of the STP140N6F7?
The typical on-state resistance (RDS(on)) is 0.0031 Ω, with a maximum value of 0.0035 Ω.
- What is the maximum continuous drain current (ID) at Tcase = 25 °C?
The maximum continuous drain current (ID) at Tcase = 25 °C is 80 A.
- What is the total dissipation (PTOT) at Tcase = 25 °C?
The total dissipation (PTOT) at Tcase = 25 °C is 158 W.
- What is the maximum junction temperature (Tj) of the STP140N6F7?
The maximum junction temperature (Tj) is 175 °C.
- What are the typical switching times for the STP140N6F7?
The typical turn-on delay time (td(on)) is 24 ns, the rise time (tr) is 68 ns, the turn-off delay time (td(off)) is 39 ns, and the fall time (tf) is 20 ns.
- What package type is the STP140N6F7 available in?
The STP140N6F7 is available in a TO-220 type A package.
- What are some of the key applications for the STP140N6F7 MOSFET?
The STP140N6F7 is suitable for switching applications, power supplies, DC-DC converters, motor control systems, and automotive applications such as ABS.
- Does the STP140N6F7 have any special features for EMI immunity?
Yes, the STP140N6F7 has a low Crss/Ciss ratio, which enhances EMI immunity.
- Is the STP140N6F7 tested for avalanche ruggedness?
Yes, the STP140N6F7 is 100% avalanche tested, ensuring high avalanche ruggedness.
