Overview
The STP100N6F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device features an enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it highly suitable for various high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Drain-Source Voltage (VDS) | 60 | V |
| Maximum Gate-Source Voltage (VGS) | ±20 | V |
| Maximum Continuous Drain Current (ID) | 100 | A |
| Maximum Pulsed Drain Current (IDM) | 400 | A |
| Maximum Drain-Source On-State Resistance (RDS(on)) | 5.6 mΩ | mΩ |
| Total Power Dissipation (PTOT) | 125 | W |
| Operating Junction Temperature (Tj) | -55 to 175 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 1.2 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Total Gate Charge (Qg) | 30 nC | nC |
| Package Type | TO-220 |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 4.7 mΩ.
- Excellent figure of merit (FoM) for high efficiency and performance.
- Low Crss/Ciss ratio for enhanced EMI immunity.
- High avalanche ruggedness, ensuring robust operation under various conditions.
- Reduced internal capacitance and gate charge for faster switching times.
Applications
The STP100N6F7 is designed for high-performance switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Industrial automation and control systems.
- High-power audio amplifiers.
- Other applications requiring low on-state resistance and high current handling.
Q & A
- What is the maximum drain-source voltage of the STP100N6F7?
The maximum drain-source voltage (VDS) is 60 V.
- What is the typical on-state resistance (RDS(on)) of the STP100N6F7?
The typical on-state resistance (RDS(on)) is 4.7 mΩ.
- What is the maximum continuous drain current (ID) of the STP100N6F7?
The maximum continuous drain current (ID) is 100 A at TC = 25 °C.
- What is the package type of the STP100N6F7?
The package type is TO-220.
- What is the operating junction temperature range of the STP100N6F7?
The operating junction temperature range is -55 to 175 °C.
- What is the total power dissipation (PTOT) of the STP100N6F7?
The total power dissipation (PTOT) is 125 W.
- What are the key features of the STripFET™ F7 technology used in the STP100N6F7?
The key features include very low on-state resistance, reduced internal capacitance, and gate charge for faster and more efficient switching, along with high avalanche ruggedness and low Crss/Ciss ratio for EMI immunity.
- What are some typical applications for the STP100N6F7?
Typical applications include power supplies, DC-DC converters, motor control, industrial automation, and high-power audio amplifiers.
- What is the thermal resistance junction-case (Rthj-case) of the STP100N6F7?
The thermal resistance junction-case (Rthj-case) is 1.2 °C/W.
- What is the total gate charge (Qg) of the STP100N6F7?
The total gate charge (Qg) is 30 nC at VDD = 30 V, ID = 100 A, and VGS = 10 V.
