STP120N4F6
  • Share:

STMicroelectronics STP120N4F6

Manufacturer No:
STP120N4F6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 40V 80A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP120N4F6 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the 6th generation of STripFET™ VI DeepGATE™ technology. This device is designed to offer high performance and reliability in various power management applications. It features a new gate structure that enhances its electrical characteristics, making it suitable for demanding environments.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 80 A
Pulsed Drain Current (IDM) 320 A
Total Dissipation at TC = 25°C (PTOT) 110 W
Storage Temperature (Tstg) -55 to 175 °C
Operating Junction Temperature (Tj) - °C
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 40 A 3.8
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 35 °C/W

Key Features

  • Low On-Resistance: The STP120N4F6 features a very low static drain-source on resistance (RDS(on)) of 3.8 mΩ, which minimizes power losses and enhances efficiency.
  • Low Gate Charge: It has a low total gate charge, reducing the gate drive power loss and improving switching performance.
  • High Avalanche Ruggedness: The device exhibits high avalanche ruggedness, making it robust against transient conditions.
  • AEC-Q101 Qualified: Designed for automotive applications, it is AEC-Q101 qualified, ensuring reliability and compliance with automotive standards.
  • ECOPACK® Packages: Available in environmentally compliant ECOPACK® packages, which meet various levels of environmental requirements.

Applications

The STP120N4F6 is suitable for a variety of power management and switching applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
  • Power supplies: Its low on-resistance and high current handling capabilities make it suitable for high-efficiency power supply designs.
  • Motor control: It can be used in motor control circuits where high current and low resistance are critical.
  • Switching applications: The device is optimized for high-frequency switching applications, such as in DC-DC converters and power factor correction circuits.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP120N4F6?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current (ID) at 25°C for the STP120N4F6?

    The continuous drain current (ID) at 25°C is 80 A.

  3. What is the typical static drain-source on resistance (RDS(on)) of the STP120N4F6?

    The typical static drain-source on resistance (RDS(on)) is 3.8 mΩ at VGS = 10 V and ID = 40 A.

  4. Is the STP120N4F6 AEC-Q101 qualified?
  5. What are the thermal resistance values for the STP120N4F6?

    The thermal resistance junction-case (Rthj-case) is 1.36 °C/W, and the thermal resistance junction-PCB (Rthj-pcb) is 35 °C/W.

  6. What is the storage temperature range for the STP120N4F6?

    The storage temperature range is -55 to 175 °C.

  7. What is the total gate charge of the STP120N4F6?

    The total gate charge is approximately 65 nC.

  8. What are the package options for the STP120N4F6?

    The STP120N4F6 is available in the TO-220 package.

  9. What are some typical applications for the STP120N4F6?

    Typical applications include automotive systems, power supplies, motor control, and high-frequency switching applications.

  10. Does the STP120N4F6 come in environmentally compliant packages?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.24
74

Please send RFQ , we will respond immediately.

Same Series
STD120N4F6
STD120N4F6
MOSFET N-CH 40V 80A DPAK
STB120N4F6
STB120N4F6
MOSFET N-CH 40V 80A D2PAK

Similar Products

Part Number STP120N4F6 STP180N4F6 STP140N4F6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 120A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 40A, 10V - -
Vgs(th) (Max) @ Id 4V @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V - -
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 110W (Tc) 190W (Tc) 168W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3

Related Product By Brand

STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
STN1NF20
STN1NF20
STMicroelectronics
MOSFET N-CH 200V 1A SOT-223
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN