STP120N4F6
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STMicroelectronics STP120N4F6

Manufacturer No:
STP120N4F6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 40V 80A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP120N4F6 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the 6th generation of STripFET™ VI DeepGATE™ technology. This device is designed to offer high performance and reliability in various power management applications. It features a new gate structure that enhances its electrical characteristics, making it suitable for demanding environments.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 80 A
Pulsed Drain Current (IDM) 320 A
Total Dissipation at TC = 25°C (PTOT) 110 W
Storage Temperature (Tstg) -55 to 175 °C
Operating Junction Temperature (Tj) - °C
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 40 A 3.8
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 35 °C/W

Key Features

  • Low On-Resistance: The STP120N4F6 features a very low static drain-source on resistance (RDS(on)) of 3.8 mΩ, which minimizes power losses and enhances efficiency.
  • Low Gate Charge: It has a low total gate charge, reducing the gate drive power loss and improving switching performance.
  • High Avalanche Ruggedness: The device exhibits high avalanche ruggedness, making it robust against transient conditions.
  • AEC-Q101 Qualified: Designed for automotive applications, it is AEC-Q101 qualified, ensuring reliability and compliance with automotive standards.
  • ECOPACK® Packages: Available in environmentally compliant ECOPACK® packages, which meet various levels of environmental requirements.

Applications

The STP120N4F6 is suitable for a variety of power management and switching applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
  • Power supplies: Its low on-resistance and high current handling capabilities make it suitable for high-efficiency power supply designs.
  • Motor control: It can be used in motor control circuits where high current and low resistance are critical.
  • Switching applications: The device is optimized for high-frequency switching applications, such as in DC-DC converters and power factor correction circuits.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP120N4F6?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current (ID) at 25°C for the STP120N4F6?

    The continuous drain current (ID) at 25°C is 80 A.

  3. What is the typical static drain-source on resistance (RDS(on)) of the STP120N4F6?

    The typical static drain-source on resistance (RDS(on)) is 3.8 mΩ at VGS = 10 V and ID = 40 A.

  4. Is the STP120N4F6 AEC-Q101 qualified?
  5. What are the thermal resistance values for the STP120N4F6?

    The thermal resistance junction-case (Rthj-case) is 1.36 °C/W, and the thermal resistance junction-PCB (Rthj-pcb) is 35 °C/W.

  6. What is the storage temperature range for the STP120N4F6?

    The storage temperature range is -55 to 175 °C.

  7. What is the total gate charge of the STP120N4F6?

    The total gate charge is approximately 65 nC.

  8. What are the package options for the STP120N4F6?

    The STP120N4F6 is available in the TO-220 package.

  9. What are some typical applications for the STP120N4F6?

    Typical applications include automotive systems, power supplies, motor control, and high-frequency switching applications.

  10. Does the STP120N4F6 come in environmentally compliant packages?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STD120N4F6
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STB120N4F6
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Similar Products

Part Number STP120N4F6 STP180N4F6 STP140N4F6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 120A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 40A, 10V - -
Vgs(th) (Max) @ Id 4V @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V - -
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 110W (Tc) 190W (Tc) 168W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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