STP120N4F6
  • Share:

STMicroelectronics STP120N4F6

Manufacturer No:
STP120N4F6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 40V 80A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP120N4F6 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the 6th generation of STripFET™ VI DeepGATE™ technology. This device is designed to offer high performance and reliability in various power management applications. It features a new gate structure that enhances its electrical characteristics, making it suitable for demanding environments.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 80 A
Pulsed Drain Current (IDM) 320 A
Total Dissipation at TC = 25°C (PTOT) 110 W
Storage Temperature (Tstg) -55 to 175 °C
Operating Junction Temperature (Tj) - °C
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 40 A 3.8
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 35 °C/W

Key Features

  • Low On-Resistance: The STP120N4F6 features a very low static drain-source on resistance (RDS(on)) of 3.8 mΩ, which minimizes power losses and enhances efficiency.
  • Low Gate Charge: It has a low total gate charge, reducing the gate drive power loss and improving switching performance.
  • High Avalanche Ruggedness: The device exhibits high avalanche ruggedness, making it robust against transient conditions.
  • AEC-Q101 Qualified: Designed for automotive applications, it is AEC-Q101 qualified, ensuring reliability and compliance with automotive standards.
  • ECOPACK® Packages: Available in environmentally compliant ECOPACK® packages, which meet various levels of environmental requirements.

Applications

The STP120N4F6 is suitable for a variety of power management and switching applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
  • Power supplies: Its low on-resistance and high current handling capabilities make it suitable for high-efficiency power supply designs.
  • Motor control: It can be used in motor control circuits where high current and low resistance are critical.
  • Switching applications: The device is optimized for high-frequency switching applications, such as in DC-DC converters and power factor correction circuits.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP120N4F6?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current (ID) at 25°C for the STP120N4F6?

    The continuous drain current (ID) at 25°C is 80 A.

  3. What is the typical static drain-source on resistance (RDS(on)) of the STP120N4F6?

    The typical static drain-source on resistance (RDS(on)) is 3.8 mΩ at VGS = 10 V and ID = 40 A.

  4. Is the STP120N4F6 AEC-Q101 qualified?
  5. What are the thermal resistance values for the STP120N4F6?

    The thermal resistance junction-case (Rthj-case) is 1.36 °C/W, and the thermal resistance junction-PCB (Rthj-pcb) is 35 °C/W.

  6. What is the storage temperature range for the STP120N4F6?

    The storage temperature range is -55 to 175 °C.

  7. What is the total gate charge of the STP120N4F6?

    The total gate charge is approximately 65 nC.

  8. What are the package options for the STP120N4F6?

    The STP120N4F6 is available in the TO-220 package.

  9. What are some typical applications for the STP120N4F6?

    Typical applications include automotive systems, power supplies, motor control, and high-frequency switching applications.

  10. Does the STP120N4F6 come in environmentally compliant packages?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.24
74

Please send RFQ , we will respond immediately.

Same Series
STD120N4F6
STD120N4F6
MOSFET N-CH 40V 80A DPAK
STB120N4F6
STB120N4F6
MOSFET N-CH 40V 80A D2PAK

Similar Products

Part Number STP120N4F6 STP180N4F6 STP140N4F6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 120A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 40A, 10V - -
Vgs(th) (Max) @ Id 4V @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V - -
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 110W (Tc) 190W (Tc) 168W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB