Overview
The STP120N4F6 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the 6th generation of STripFET™ VI DeepGATE™ technology. This device is designed to offer high performance and reliability in various power management applications. It features a new gate structure that enhances its electrical characteristics, making it suitable for demanding environments.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 40 | V |
Gate-Source Voltage (VGS) | ±20 | V |
Continuous Drain Current (ID) at TC = 25°C | 80 | A |
Pulsed Drain Current (IDM) | 320 | A |
Total Dissipation at TC = 25°C (PTOT) | 110 | W |
Storage Temperature (Tstg) | -55 to 175 | °C |
Operating Junction Temperature (Tj) | - | °C |
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 40 A | 3.8 | mΩ |
Thermal Resistance Junction-Case (Rthj-case) | 1.36 | °C/W |
Thermal Resistance Junction-PCB (Rthj-pcb) | 35 | °C/W |
Key Features
- Low On-Resistance: The STP120N4F6 features a very low static drain-source on resistance (RDS(on)) of 3.8 mΩ, which minimizes power losses and enhances efficiency.
- Low Gate Charge: It has a low total gate charge, reducing the gate drive power loss and improving switching performance.
- High Avalanche Ruggedness: The device exhibits high avalanche ruggedness, making it robust against transient conditions.
- AEC-Q101 Qualified: Designed for automotive applications, it is AEC-Q101 qualified, ensuring reliability and compliance with automotive standards.
- ECOPACK® Packages: Available in environmentally compliant ECOPACK® packages, which meet various levels of environmental requirements.
Applications
The STP120N4F6 is suitable for a variety of power management and switching applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power supplies: Its low on-resistance and high current handling capabilities make it suitable for high-efficiency power supply designs.
- Motor control: It can be used in motor control circuits where high current and low resistance are critical.
- Switching applications: The device is optimized for high-frequency switching applications, such as in DC-DC converters and power factor correction circuits.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP120N4F6?
The maximum drain-source voltage (VDS) is 40 V.
- What is the continuous drain current (ID) at 25°C for the STP120N4F6?
The continuous drain current (ID) at 25°C is 80 A.
- What is the typical static drain-source on resistance (RDS(on)) of the STP120N4F6?
The typical static drain-source on resistance (RDS(on)) is 3.8 mΩ at VGS = 10 V and ID = 40 A.
- Is the STP120N4F6 AEC-Q101 qualified?
- What are the thermal resistance values for the STP120N4F6?
The thermal resistance junction-case (Rthj-case) is 1.36 °C/W, and the thermal resistance junction-PCB (Rthj-pcb) is 35 °C/W.
- What is the storage temperature range for the STP120N4F6?
The storage temperature range is -55 to 175 °C.
- What is the total gate charge of the STP120N4F6?
The total gate charge is approximately 65 nC.
- What are the package options for the STP120N4F6?
The STP120N4F6 is available in the TO-220 package.
- What are some typical applications for the STP120N4F6?
Typical applications include automotive systems, power supplies, motor control, and high-frequency switching applications.
- Does the STP120N4F6 come in environmentally compliant packages?