Overview
The STP180N4F6 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET F6 technology. This device features a new trench gate structure, which enhances its performance and efficiency. It is packaged in a TO-220-3 package, making it suitable for a variety of high-power applications. The STP180N4F6 is known for its very low on-resistance, low gate charge, and high avalanche ruggedness, making it an ideal choice for switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 120 A |
| Vgs - Maximum Gate-Source Voltage | 20 V |
| Vgs(th) - Gate-Threshold Voltage | 4.5 V |
| Rds(on) - Drain-Source On-State Resistance | 2.7 mΩ (typ.) |
| Pd - Maximum Power Dissipation | 190 W |
| Tj - Maximum Junction Temperature | 175 °C |
| Qg - Total Gate Charge | 130 nC |
| tr - Rise Time | 150 nS |
| Coss - Output Capacitance | 745 pF |
| Package | TO-220-3 |
Key Features
- Very low on-resistance (Rds(on) = 2.7 mΩ typ.)
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Enhanced trench gate structure using STripFET F6 technology
Applications
The STP180N4F6 is primarily used in switching applications due to its high current handling capability and low on-resistance. It is suitable for various power management and control systems, including but not limited to:
- High current switching applications
- Power supplies and converters
- LED lighting systems
Q & A
- What is the drain-source breakdown voltage of the STP180N4F6?
The drain-source breakdown voltage (Vds) of the STP180N4F6 is 40 V. - What is the maximum continuous drain current of the STP180N4F6?
The maximum continuous drain current (Id) of the STP180N4F6 is 120 A. - What is the typical on-resistance of the STP180N4F6?
The typical on-resistance (Rds(on)) of the STP180N4F6 is 2.7 mΩ. - What is the maximum gate-source voltage of the STP180N4F6?
The maximum gate-source voltage (Vgs) of the STP180N4F6 is 20 V. - What is the maximum junction temperature of the STP180N4F6?
The maximum junction temperature (Tj) of the STP180N4F6 is 175 °C. - What is the total gate charge of the STP180N4F6?
The total gate charge (Qg) of the STP180N4F6 is 130 nC. - What is the rise time of the STP180N4F6?
The rise time (tr) of the STP180N4F6 is 150 nS. - What is the output capacitance of the STP180N4F6?
The output capacitance (Coss) of the STP180N4F6 is 745 pF. - In what package is the STP180N4F6 available?
The STP180N4F6 is available in a TO-220-3 package. - What are the key applications of the STP180N4F6?
The STP180N4F6 is primarily used in switching applications, including high current switching, power supplies, and LED lighting systems.
