STN4NF20L
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STMicroelectronics STN4NF20L

Manufacturer No:
STN4NF20L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 1A SOT-223
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STN4NF20L is an N-channel power MOSFET produced by STMicroelectronics, utilizing their unique STripFET™ II process. This device is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters. The STN4NF20L features a drain-source voltage (VDS) of 200 V, a maximum drain current (ID) of 1 A, and a low static drain-source on-resistance (RDS(on)) of 1.1 Ω. It is packaged in a SOT-223 format, which is compact and efficient for various applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 200 V
Drain Current Continuous (ID) 1 A
Static Drain-Source On-Resistance (RDS(on)) 1.1 Ω
Gate-Source Voltage (VGS) ±20 V
Gate Threshold Voltage (VGS(th)) 1-2 V
Total Dissipation at TC = 25 °C (PTOT) 3.3 W
Thermal Resistance Junction to Ambient (Rthj-amb) 38 (t < 10 sec), 62.5 (t > 10 sec) °C/W
Package SOT-223

Key Features

  • 100% avalanche tested
  • Low gate charge
  • Exceptional dv/dt capability
  • Minimized input capacitance and gate charge
  • Suitable for primary switch in advanced high-efficiency isolated DC-DC converters
  • Compact SOT-223 package
  • ECOPACK® compliant for environmental sustainability

Applications

  • Switching applications
  • Advanced high-efficiency isolated DC-DC converters
  • Power management systems requiring low RDS(on) and high efficiency
  • Industrial and consumer electronics where high reliability and performance are critical

Q & A

  1. What is the maximum drain-source voltage of the STN4NF20L?

    The maximum drain-source voltage (VDS) is 200 V.

  2. What is the maximum continuous drain current of the STN4NF20L?

    The maximum continuous drain current (ID) is 1 A at TC = 25 °C.

  3. What is the typical static drain-source on-resistance of the STN4NF20L?

    The typical static drain-source on-resistance (RDS(on)) is 1.1 Ω.

  4. What is the gate-source voltage range for the STN4NF20L?

    The gate-source voltage (VGS) range is ±20 V.

  5. What is the thermal resistance junction to ambient for the STN4NF20L?

    The thermal resistance junction to ambient (Rthj-amb) is 38 °C/W for t < 10 sec and 62.5 °C/W for t > 10 sec.

  6. What package type is the STN4NF20L available in?

    The STN4NF20L is available in a SOT-223 package.

  7. Is the STN4NF20L environmentally compliant?

    Yes, the STN4NF20L is ECOPACK® compliant, meeting various environmental standards.

  8. What are the typical applications for the STN4NF20L?

    The STN4NF20L is typically used in switching applications and advanced high-efficiency isolated DC-DC converters.

  9. What is the maximum total dissipation at TC = 25 °C for the STN4NF20L?

    The maximum total dissipation at TC = 25 °C (PTOT) is 3.3 W.

  10. What is the gate threshold voltage range for the STN4NF20L?

    The gate threshold voltage (VGS(th)) range is 1-2 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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