STN4NF06L
  • Share:

STMicroelectronics STN4NF06L

Manufacturer No:
STN4NF06L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN4NF06L is an automotive-grade N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters. It is particularly beneficial for telecom and computer applications, as well as any application requiring low gate charge driving.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) at TC = 25 °C 4 A
Continuous Drain Current (ID) at TC = 100 °C 2.9 A
Pulsed Drain Current (IDM) 16 A
Total Power Dissipation at TC = 25 °C 3.3 W
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 1.5 A 0.07 - 0.10 Ω
Gate Threshold Voltage (VGS(th)) 1 - 2.8 V
Total Gate Charge (Qg) 7 - 9 nC
Thermal Resistance Junction-Pcb (Rthj-pcb) 38 °C/W °C/W

Key Features

  • AEC-Q101 qualified, ensuring high reliability for automotive applications.
  • Exceptional dv/dt capability, enhancing the device's performance in high-frequency switching applications.
  • 100% avalanche tested, providing robustness against transient conditions.
  • Low gate charge, which reduces the energy required for switching and improves overall efficiency.

Applications

The STN4NF06L is suitable for a variety of applications, including:

  • Advanced high-efficiency isolated DC-DC converters for telecom and computer systems.
  • Applications requiring low gate charge driving, such as in high-frequency switching circuits.
  • Automotive and industrial power management systems where reliability and efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STN4NF06L?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance (RDS(on)) of the STN4NF06L?

    The typical on-resistance (RDS(on)) is 0.07 Ω at VGS = 10 V and ID = 1.5 A.

  3. Is the STN4NF06L AEC-Q101 qualified?
  4. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 4 A).

  5. What is the total gate charge (Qg) of the STN4NF06L?

    The total gate charge (Qg) is between 7 and 9 nC).

  6. What is the thermal resistance junction-pcb (Rthj-pcb) of the STN4NF06L?

    The thermal resistance junction-pcb (Rthj-pcb) is 38 °C/W when mounted on an FR-4 board with a 1 inch^2 pad).

  7. What are the typical applications of the STN4NF06L?

    The STN4NF06L is typically used in advanced high-efficiency isolated DC-DC converters for telecom and computer systems, and in applications requiring low gate charge driving).

  8. What package type is the STN4NF06L available in?

    The STN4NF06L is available in a SOT-223 package).

  9. Is the STN4NF06L 100% avalanche tested?
  10. What is the maximum operating junction temperature (TJ) of the STN4NF06L?

    The maximum operating junction temperature (TJ) is 150 °C).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.94
982

Please send RFQ , we will respond immediately.

Similar Products

Part Number STN4NF06L STN3NF06L STN4NF03L
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 10V 100mOhm @ 1.5A, 10V 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA 2.8V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 5 V 9 nC @ 5 V 9 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V 340 pF @ 25 V 330 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.3W (Tc) 3.3W (Tc) 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP