STN4NF06L
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STMicroelectronics STN4NF06L

Manufacturer No:
STN4NF06L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN4NF06L is an automotive-grade N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters. It is particularly beneficial for telecom and computer applications, as well as any application requiring low gate charge driving.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) at TC = 25 °C 4 A
Continuous Drain Current (ID) at TC = 100 °C 2.9 A
Pulsed Drain Current (IDM) 16 A
Total Power Dissipation at TC = 25 °C 3.3 W
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 1.5 A 0.07 - 0.10 Ω
Gate Threshold Voltage (VGS(th)) 1 - 2.8 V
Total Gate Charge (Qg) 7 - 9 nC
Thermal Resistance Junction-Pcb (Rthj-pcb) 38 °C/W °C/W

Key Features

  • AEC-Q101 qualified, ensuring high reliability for automotive applications.
  • Exceptional dv/dt capability, enhancing the device's performance in high-frequency switching applications.
  • 100% avalanche tested, providing robustness against transient conditions.
  • Low gate charge, which reduces the energy required for switching and improves overall efficiency.

Applications

The STN4NF06L is suitable for a variety of applications, including:

  • Advanced high-efficiency isolated DC-DC converters for telecom and computer systems.
  • Applications requiring low gate charge driving, such as in high-frequency switching circuits.
  • Automotive and industrial power management systems where reliability and efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STN4NF06L?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance (RDS(on)) of the STN4NF06L?

    The typical on-resistance (RDS(on)) is 0.07 Ω at VGS = 10 V and ID = 1.5 A.

  3. Is the STN4NF06L AEC-Q101 qualified?
  4. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 4 A).

  5. What is the total gate charge (Qg) of the STN4NF06L?

    The total gate charge (Qg) is between 7 and 9 nC).

  6. What is the thermal resistance junction-pcb (Rthj-pcb) of the STN4NF06L?

    The thermal resistance junction-pcb (Rthj-pcb) is 38 °C/W when mounted on an FR-4 board with a 1 inch^2 pad).

  7. What are the typical applications of the STN4NF06L?

    The STN4NF06L is typically used in advanced high-efficiency isolated DC-DC converters for telecom and computer systems, and in applications requiring low gate charge driving).

  8. What package type is the STN4NF06L available in?

    The STN4NF06L is available in a SOT-223 package).

  9. Is the STN4NF06L 100% avalanche tested?
  10. What is the maximum operating junction temperature (TJ) of the STN4NF06L?

    The maximum operating junction temperature (TJ) is 150 °C).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN4NF06L STN3NF06L STN4NF03L
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 10V 100mOhm @ 1.5A, 10V 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA 2.8V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 5 V 9 nC @ 5 V 9 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V 340 pF @ 25 V 330 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.3W (Tc) 3.3W (Tc) 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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