STN4NF06L
  • Share:

STMicroelectronics STN4NF06L

Manufacturer No:
STN4NF06L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN4NF06L is an automotive-grade N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters. It is particularly beneficial for telecom and computer applications, as well as any application requiring low gate charge driving.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) at TC = 25 °C 4 A
Continuous Drain Current (ID) at TC = 100 °C 2.9 A
Pulsed Drain Current (IDM) 16 A
Total Power Dissipation at TC = 25 °C 3.3 W
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 1.5 A 0.07 - 0.10 Ω
Gate Threshold Voltage (VGS(th)) 1 - 2.8 V
Total Gate Charge (Qg) 7 - 9 nC
Thermal Resistance Junction-Pcb (Rthj-pcb) 38 °C/W °C/W

Key Features

  • AEC-Q101 qualified, ensuring high reliability for automotive applications.
  • Exceptional dv/dt capability, enhancing the device's performance in high-frequency switching applications.
  • 100% avalanche tested, providing robustness against transient conditions.
  • Low gate charge, which reduces the energy required for switching and improves overall efficiency.

Applications

The STN4NF06L is suitable for a variety of applications, including:

  • Advanced high-efficiency isolated DC-DC converters for telecom and computer systems.
  • Applications requiring low gate charge driving, such as in high-frequency switching circuits.
  • Automotive and industrial power management systems where reliability and efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STN4NF06L?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance (RDS(on)) of the STN4NF06L?

    The typical on-resistance (RDS(on)) is 0.07 Ω at VGS = 10 V and ID = 1.5 A.

  3. Is the STN4NF06L AEC-Q101 qualified?
  4. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 4 A).

  5. What is the total gate charge (Qg) of the STN4NF06L?

    The total gate charge (Qg) is between 7 and 9 nC).

  6. What is the thermal resistance junction-pcb (Rthj-pcb) of the STN4NF06L?

    The thermal resistance junction-pcb (Rthj-pcb) is 38 °C/W when mounted on an FR-4 board with a 1 inch^2 pad).

  7. What are the typical applications of the STN4NF06L?

    The STN4NF06L is typically used in advanced high-efficiency isolated DC-DC converters for telecom and computer systems, and in applications requiring low gate charge driving).

  8. What package type is the STN4NF06L available in?

    The STN4NF06L is available in a SOT-223 package).

  9. Is the STN4NF06L 100% avalanche tested?
  10. What is the maximum operating junction temperature (TJ) of the STN4NF06L?

    The maximum operating junction temperature (TJ) is 150 °C).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.94
982

Please send RFQ , we will respond immediately.

Similar Products

Part Number STN4NF06L STN3NF06L STN4NF03L
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 10V 100mOhm @ 1.5A, 10V 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA 2.8V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 5 V 9 nC @ 5 V 9 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V 340 pF @ 25 V 330 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.3W (Tc) 3.3W (Tc) 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
LDL1117S33R
LDL1117S33R
STMicroelectronics
IC REG LINEAR 3.3V 1.2A SOT223