Overview
The STN4NF03L is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET™ II family, which utilizes a unique 'single feature size' strip-based process. This technology results in extremely high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The MOSFET is packaged in a SOT-223 case, making it suitable for a variety of industrial and automotive applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 30 | V |
Gate-Source Voltage (VGS) | ±16 | V |
Continuous Drain Current (ID) at TC = 25 °C | 6.5 | A |
Continuous Drain Current (ID) at TC = 100 °C | 4.5 | A |
Pulsed Drain Current (IDM) | 26 | A |
Total Dissipation at TC = 25 °C (PTOT) | 3.3 | W |
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 2 A | 0.039 | Ω |
Thermal Resistance Junction-PCB (Rthj-pcb) | 38 | °C/W |
Operating Junction Temperature (TJ) | -55 to 150 | °C |
Maximum Lead Temperature for Soldering | 260 | °C |
Key Features
- Low On-Resistance: The STN4NF03L features a low static drain-source on resistance of 0.039 Ω, making it efficient for high-current applications.
- Rugged Avalanche Characteristics: The MOSFET is designed with rugged avalanche characteristics, enhancing its reliability in demanding environments.
- High Packing Density: The unique 'single feature size' strip-based process results in extremely high packing density, contributing to its compact and efficient design.
- Enhanced Manufacturing Reproducibility: The process used ensures less critical alignment steps, leading to remarkable manufacturing reproducibility.
- ESD Protection: The device is available with ESD protection, enhancing its robustness against electrostatic discharge.
Applications
The STN4NF03L is suitable for a wide range of applications, including:
- Switching Applications: Its low on-resistance and high current handling capabilities make it ideal for switching applications.
- Industrial Applications: It is used in various industrial applications due to its robustness and efficiency.
- Automotive Applications: The MOSFET is also recommended for automotive applications, where reliability and performance are critical.
Q & A
- What is the maximum drain-source voltage of the STN4NF03L?
The maximum drain-source voltage (VDS) is 30 V.
- What is the continuous drain current at 25 °C and 100 °C?
The continuous drain current is 6.5 A at 25 °C and 4.5 A at 100 °C.
- What is the static drain-source on resistance?
The static drain-source on resistance (RDS(on)) is 0.039 Ω at VGS = 10 V and ID = 2 A.
- What is the thermal resistance junction-PCB?
The thermal resistance junction-PCB (Rthj-pcb) is 38 °C/W.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 260 °C.
- What are the key features of the STN4NF03L?
The key features include low on-resistance, rugged avalanche characteristics, high packing density, and enhanced manufacturing reproducibility.
- What are the typical applications of the STN4NF03L?
The typical applications include switching, industrial, and automotive applications.
- Is the STN4NF03L ESD protected?
Yes, the device is available with ESD protection.
- What is the package type of the STN4NF03L?
The package type is SOT-223.
- Is the STN4NF03L RoHS compliant?
Yes, the STN4NF03L is RoHS compliant and comes in an Ecopack2 package.