STN4NF03L
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STMicroelectronics STN4NF03L

Manufacturer No:
STN4NF03L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 6.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN4NF03L is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET™ II family, which utilizes a unique 'single feature size' strip-based process. This technology results in extremely high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The MOSFET is packaged in a SOT-223 case, making it suitable for a variety of industrial and automotive applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 30 V
Gate-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) at TC = 25 °C 6.5 A
Continuous Drain Current (ID) at TC = 100 °C 4.5 A
Pulsed Drain Current (IDM) 26 A
Total Dissipation at TC = 25 °C (PTOT) 3.3 W
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 2 A 0.039 Ω
Thermal Resistance Junction-PCB (Rthj-pcb) 38 °C/W
Operating Junction Temperature (TJ) -55 to 150 °C
Maximum Lead Temperature for Soldering 260 °C

Key Features

  • Low On-Resistance: The STN4NF03L features a low static drain-source on resistance of 0.039 Ω, making it efficient for high-current applications.
  • Rugged Avalanche Characteristics: The MOSFET is designed with rugged avalanche characteristics, enhancing its reliability in demanding environments.
  • High Packing Density: The unique 'single feature size' strip-based process results in extremely high packing density, contributing to its compact and efficient design.
  • Enhanced Manufacturing Reproducibility: The process used ensures less critical alignment steps, leading to remarkable manufacturing reproducibility.
  • ESD Protection: The device is available with ESD protection, enhancing its robustness against electrostatic discharge.

Applications

The STN4NF03L is suitable for a wide range of applications, including:

  • Switching Applications: Its low on-resistance and high current handling capabilities make it ideal for switching applications.
  • Industrial Applications: It is used in various industrial applications due to its robustness and efficiency.
  • Automotive Applications: The MOSFET is also recommended for automotive applications, where reliability and performance are critical.

Q & A

  1. What is the maximum drain-source voltage of the STN4NF03L?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the continuous drain current at 25 °C and 100 °C?

    The continuous drain current is 6.5 A at 25 °C and 4.5 A at 100 °C.

  3. What is the static drain-source on resistance?

    The static drain-source on resistance (RDS(on)) is 0.039 Ω at VGS = 10 V and ID = 2 A.

  4. What is the thermal resistance junction-PCB?

    The thermal resistance junction-PCB (Rthj-pcb) is 38 °C/W.

  5. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 260 °C.

  6. What are the key features of the STN4NF03L?

    The key features include low on-resistance, rugged avalanche characteristics, high packing density, and enhanced manufacturing reproducibility.

  7. What are the typical applications of the STN4NF03L?

    The typical applications include switching, industrial, and automotive applications.

  8. Is the STN4NF03L ESD protected?

    Yes, the device is available with ESD protection.

  9. What is the package type of the STN4NF03L?

    The package type is SOT-223.

  10. Is the STN4NF03L RoHS compliant?

    Yes, the STN4NF03L is RoHS compliant and comes in an Ecopack2 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN4NF03L STN4NF06L
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 60 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 2A, 10V 100mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 9 nC @ 5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 340 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.3W (Tc) 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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