Overview
The STN3NF06L is an N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET™ II process. This device is designed to minimize input capacitance and gate charge, making it highly suitable for high-efficiency applications. It features a drain-source voltage (VDS) of 60 V, a typical on-resistance (RDS(on)) of 0.07 Ω, and a continuous drain current (ID) of 4 A. The STN3NF06L is packaged in a SOT-223 format, which is compact and efficient for various electronic designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-source voltage | VDS | 60 | V |
| Gate-source voltage | VGS | ±16 | V |
| Continuous drain current at Tc = 25 °C | ID | 4 | A |
| Continuous drain current at Tc = 100 °C | ID | 2.9 | A |
| Pulsed drain current | IDM | 16 | A |
| Total dissipation at Tpcb = 25 °C | PTOT | 3.3 | W |
| Peak diode recovery voltage slope | dv/dt | 10 | V/ns |
| Single pulse avalanche energy | EAS | 200 | mJ |
| Operating junction temperature range | Tj | -55 to 150 | °C |
| Storage temperature range | Tstg | -55 to 150 | °C |
| Thermal resistance junction-pcb | Rthj-pcb | 38 / 100 | °C/W |
| Static drain-source on-resistance | RDS(on) | 0.07 / 0.10 | Ω |
| Gate threshold voltage | VGS(th) | 1 to 2.8 | V |
Key Features
- Exceptional dv/dt capability
- 100% avalanche tested
- Low threshold drive requirements
- Minimized input capacitance and gate charge due to STripFET™ II process
- Ideal for high-efficiency isolated DC-DC converters
- Suitable for applications requiring low gate charge drive
Applications
The STN3NF06L is particularly suited for advanced high-efficiency isolated DC-DC converters in telecom and computer applications. It is also applicable in any scenario where low gate charge drive requirements are necessary. Other potential applications include switching circuits and any high-efficiency power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STN3NF06L?
The maximum drain-source voltage (VDS) is 60 V. - What is the typical on-resistance (RDS(on)) of the STN3NF06L?
The typical on-resistance (RDS(on)) is 0.07 Ω. - What is the continuous drain current (ID) at Tc = 25 °C?
The continuous drain current (ID) at Tc = 25 °C is 4 A. - What is the peak diode recovery voltage slope (dv/dt) of the STN3NF06L?
The peak diode recovery voltage slope (dv/dt) is 10 V/ns. - What is the single pulse avalanche energy (EAS) of the STN3NF06L?
The single pulse avalanche energy (EAS) is 200 mJ. - What is the operating junction temperature range of the STN3NF06L?
The operating junction temperature range is -55 to 150 °C. - What is the thermal resistance junction-pcb (Rthj-pcb) of the STN3NF06L?
The thermal resistance junction-pcb (Rthj-pcb) is 38 °C/W when mounted on an FR-4 board and 100 °C/W on the minimum recommended footprint. - What process is used to manufacture the STN3NF06L?
The STN3NF06L is manufactured using STMicroelectronics' unique STripFET™ II process. - What are some typical applications of the STN3NF06L?
Typical applications include high-efficiency isolated DC-DC converters in telecom and computer systems, and any applications requiring low gate charge drive. - What package type is the STN3NF06L available in?
The STN3NF06L is available in a SOT-223 package.
