STN3NF06
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STMicroelectronics STN3NF06

Manufacturer No:
STN3NF06
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4A SOT-223
Delivery:
Payment:
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Product Introduction

Overview

The STN3NF06 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique 'Single Feature Size™' strip-based process. This MOSFET is part of the STripFET™ II family, known for its exceptional packing density, low on-resistance, and rugged avalanche characteristics. The device is packaged in a 3-pin SOT-223 package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C4A
Pulsed Drain Current (IDM)16A
Static Drain-Source On Resistance (RDS(on))0.07 (typ), 0.10 (max)Ω
Gate Threshold Voltage (VGS(th))2-4V
Total Dissipation at TC = 25°C (PTOT)3.3W
Thermal Resistance Junction-PCB (Rthj-pcb)38 (max) when mounted on FR-4 board°C/W
Operating Junction Temperature (TJ)-55 to 150°C

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested and rugged avalanche technology
  • Low on-resistance (RDS(on) = 0.07 Ω typical)
  • High packing density due to the 'Single Feature Size™' strip-based process
  • Low gate charge and fast switching times
  • ECOPACK® lead-free second level interconnect for environmental compliance

Applications

The STN3NF06 is suitable for various switching applications, including power management, DC-DC converters, motor control, and other high-frequency switching circuits. Its robust avalanche characteristics and low on-resistance make it an ideal choice for applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STN3NF06? The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current rating at 25°C? The continuous drain current (ID) at 25°C is 4 A.
  3. What is the typical on-resistance of the STN3NF06? The typical static drain-source on resistance (RDS(on)) is 0.07 Ω.
  4. What is the gate threshold voltage range? The gate threshold voltage (VGS(th)) range is 2-4 V.
  5. What is the maximum total dissipation at 25°C? The maximum total dissipation (PTOT) at 25°C is 3.3 W.
  6. What is the thermal resistance junction-PCB when mounted on an FR-4 board? The thermal resistance junction-PCB (Rthj-pcb) when mounted on an FR-4 board is 38 °C/W.
  7. What are the operating junction and storage temperatures? The operating junction temperature range is -55 to 150 °C, and the storage temperature range is also -55 to 150 °C.
  8. Is the STN3NF06 environmentally friendly? Yes, it is available in ECOPACK® lead-free second level interconnect packages, which are environmentally compliant.
  9. What are some typical applications for the STN3NF06? Typical applications include switching circuits, DC-DC converters, motor control, and other high-frequency switching applications.
  10. What is the package type of the STN3NF06? The STN3NF06 is packaged in a 3-pin SOT-223 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN3NF06 STN3NF06L STN3PF06
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 10V 100mOhm @ 1.5A, 10V 220mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2.8V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 9 nC @ 5 V 21 nC @ 10 V
Vgs (Max) ±20V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 25 V 340 pF @ 25 V 850 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.3W (Tc) 3.3W (Tc) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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