STN3PF06
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STMicroelectronics STN3PF06

Manufacturer No:
STN3PF06
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 2.5A SOT223
Delivery:
Payment:
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Product Introduction

Overview

The STN3PF06 is a high-performance Power MOSFET developed by STMicroelectronics using their unique STripFET™ II technology. This N-channel device is designed to offer superior performance in various power management applications. Although the STN3PF06 is currently listed as an obsolete (EOL) product, it remains popular due to its robust features and reliability.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Drain Current (ID) Continuous at Tpcb = 25 °C3A
Drain Current (ID) Continuous at Tpcb = 100 °C2A
Pulsed Drain Current (IDM)12A
Gate-Source Voltage (VGS)± 20V
Static Drain-Source On-Resistance (RDS(on))-Ω
Total Dissipation at Tpcb = 25 °C (PTOT)-W
Operating Junction Temperature Range (Tj)-55 to 175°C
Storage Temperature Range (Tstg)-55 to 150°C

Key Features

  • Very low on-resistance, enhancing efficiency in power management applications.
  • 100% avalanche tested, ensuring high reliability and ruggedness.
  • Zener-protected, providing additional protection against voltage spikes.
  • High avalanche ruggedness, making it suitable for demanding environments.
  • Ideal for flyback converters and LED lighting applications due to its robust performance characteristics.

Applications

The STN3PF06 is particularly suited for various power management and conversion applications, including:

  • Flyback converters: Its high voltage rating and low on-resistance make it an excellent choice for flyback converter designs.
  • LED lighting: The device's robustness and efficiency are beneficial in LED lighting systems.
  • General power switching applications: Its high current handling and low on-resistance make it versatile for a range of switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STN3PF06?
    The maximum drain-source voltage (VDS) of the STN3PF06 is 800 V.
  2. What is the continuous drain current (ID) at Tpcb = 25 °C?
    The continuous drain current (ID) at Tpcb = 25 °C is 3 A.
  3. What is the pulsed drain current (IDM) of the STN3PF06?
    The pulsed drain current (IDM) of the STN3PF06 is 12 A.
  4. What is the gate-source voltage (VGS) range for the STN3PF06?
    The gate-source voltage (VGS) range for the STN3PF06 is ± 20 V.
  5. Is the STN3PF06 Zener-protected?
    Yes, the STN3PF06 is Zener-protected, providing additional protection against voltage spikes.
  6. What are the typical applications of the STN3PF06?
    The STN3PF06 is typically used in flyback converters, LED lighting, and general power switching applications.
  7. What is the operating junction temperature range (Tj) of the STN3PF06?
    The operating junction temperature range (Tj) of the STN3PF06 is -55 to 175 °C.
  8. Is the STN3PF06 100% avalanche tested?
    Yes, the STN3PF06 is 100% avalanche tested, ensuring high reliability and ruggedness.
  9. What is the status of the STN3PF06 in terms of production?
    The STN3PF06 is currently listed as an obsolete (EOL) product.
  10. What technology is used in the STN3PF06?
    The STN3PF06 is developed using STMicroelectronics' unique STripFET™ II technology.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN3PF06 STN3NF06
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 1.5A, 10V 100mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V 315 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Tc) 3.3W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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