Overview
The STN3P6F6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, which results in very low on-resistance (RDS(on)) across all packages. It is housed in a SOT-223 package, making it suitable for a variety of power management applications. The STN3P6F6 is characterized by its high performance, reliability, and efficiency, making it an excellent choice for switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | -60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at Tpcb = 25 °C | -3 | A |
| Continuous Drain Current (ID) at Tpcb = 100 °C | -2 | A |
| Pulsed Drain Current (IDM) | -12 | A |
| Total Dissipation at Tpcb = 25 °C (PTOT) | 2.6 | W |
| Operating Junction Temperature Range (Tj) | -55 to 175 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -1.5 A | 0.13 (typ), 0.16 (max) | Ω |
| Thermal Resistance Junction-Pcb (Rthj-pcb) | 57 | °C/W |
Key Features
- Very Low On-Resistance: The STN3P6F6 exhibits very low RDS(on) values, enhancing its efficiency in power management applications.
- Very Low Gate Charge: This feature reduces the gate drive power loss, making the device more energy-efficient.
- High Avalanche Ruggedness: The MOSFET is designed to withstand high avalanche conditions, ensuring reliability and durability.
- Low Gate Drive Power Loss: The low gate charge and efficient gate drive characteristics minimize power consumption.
Applications
The STN3P6F6 is primarily used in switching applications due to its high performance and efficiency. It is suitable for various power management scenarios, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Industrial and automotive power systems
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STN3P6F6?
The maximum drain-source voltage (VDS) is -60 V.
- What is the typical on-resistance (RDS(on)) of the STN3P6F6?
The typical on-resistance (RDS(on)) is 0.13 Ω at VGS = -10 V and ID = -1.5 A.
- What is the maximum continuous drain current (ID) at Tpcb = 25 °C?
The maximum continuous drain current (ID) at Tpcb = 25 °C is -3 A.
- What is the thermal resistance junction-pcb (Rthj-pcb) of the STN3P6F6?
The thermal resistance junction-pcb (Rthj-pcb) is 57 °C/W.
- What are the key features of the STN3P6F6?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- In what package is the STN3P6F6 available?
The STN3P6F6 is available in a SOT-223 package.
- What is the operating junction temperature range of the STN3P6F6?
The operating junction temperature range is -55 to 175 °C.
- What are some common applications of the STN3P6F6?
Common applications include switching applications, power supplies, DC-DC converters, motor control, and industrial and automotive power systems.
- Is the STN3P6F6 RoHS compliant?
Yes, the STN3P6F6 is RoHS compliant and comes in an Ecopack2 package.
- Where can I find additional resources and CAD models for the STN3P6F6?
Additional resources, including SPICE models, EDA symbols, footprints, and 3D models, can be found on the STMicroelectronics website.
