Overview
The STL8P4LLF6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, which significantly enhances its performance. It is packaged in a PowerFLAT™ 3.3 x 3.3 package, making it suitable for a variety of high-power applications. The MOSFET is known for its very low on-resistance, low gate charge, and high avalanche ruggedness, making it an ideal choice for switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 40 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at Tpcb = 25 °C | 8 | A |
| Continuous Drain Current (ID) at Tpcb = 100 °C | 5 | A |
| Pulsed Drain Current (IDM) | 32 | A |
| Total Dissipation at Tpcb = 25 °C (PTOT) | 2.9 | W |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 4 A | 0.0175 - 0.0205 | Ω |
| Gate Threshold Voltage (VGS(th)) | 1 - 2.5 | V |
Key Features
- Very low on-resistance (RDS(on) = 0.0175 Ω typ. at VGS = 10 V, ID = 4 A)
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- New trench gate structure using STripFET™ F6 technology
- PowerFLAT™ 3.3 x 3.3 package for efficient thermal management
Applications
The STL8P4LLF6 is primarily used in switching applications due to its low on-resistance, low gate charge, and high avalanche ruggedness. It is suitable for various high-power applications such as power supplies, motor control, and other power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL8P4LLF6?
The maximum drain-source voltage (VDS) is 40 V. - What is the typical on-resistance (RDS(on)) of the STL8P4LLF6?
The typical on-resistance (RDS(on)) is 0.0175 Ω at VGS = 10 V, ID = 4 A. - What is the maximum continuous drain current (ID) at Tpcb = 25 °C?
The maximum continuous drain current (ID) at Tpcb = 25 °C is 8 A. - What is the maximum junction temperature (Tj) of the STL8P4LLF6?
The maximum junction temperature (Tj) is 150 °C. - What package type is the STL8P4LLF6 available in?
The STL8P4LLF6 is available in a PowerFLAT™ 3.3 x 3.3 package. - What are the key features of the STL8P4LLF6?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss. - What technology is used in the STL8P4LLF6?
The STL8P4LLF6 uses the STripFET™ F6 technology with a new trench gate structure. - What are the typical applications of the STL8P4LLF6?
The typical applications include switching applications, power supplies, motor control, and other power management systems. - What is the storage temperature range for the STL8P4LLF6?
The storage temperature range is -55 to 150 °C. - What is the total dissipation at Tpcb = 25 °C (PTOT) for the STL8P4LLF6?
The total dissipation at Tpcb = 25 °C (PTOT) is 2.9 W.
