STL75N8LF6
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STMicroelectronics STL75N8LF6

Manufacturer No:
STL75N8LF6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 75A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL75N8LF6 is an N-channel Power MOSFET developed by STMicroelectronics using the 6th generation of STripFET™ DeepGATE™ technology. This device features a new gate structure that results in extremely low on-state resistance (RDS(on)) and enhanced switching performance. It is designed for high-efficiency and reliability in various power management applications.

Key Specifications

Parameter Value
VDS (Maximum Drain-Source Voltage) 80 V
VGS (Maximum Gate-Source Voltage) 16 V
ID (Maximum Drain Current) 18 A
RDS(on) (Maximum Drain-Source On-State Resistance) 0.0074 Ω (max)
Tj (Maximum Junction Temperature) 175 °C
tr (Rise Time) 14 ns
Coss (Output Capacitance) 516 pF
Package PowerFLAT 5x6

Key Features

  • Extremely low RDS(on) for high efficiency
  • Enhanced trench gate structure using STripFET™ DeepGATE™ technology
  • Low gate charge and internal capacitance for faster switching
  • High avalanche ruggedness
  • Low Crss/Ciss ratio for EMI immunity

Applications

The STL75N8LF6 is suitable for a variety of applications requiring high power handling and efficiency, including:

  • Industrial power management
  • Switching power supplies
  • Motor control and drives
  • Power factor correction (PFC)
  • DC-DC converters

Q & A

  1. Q: What is the maximum drain-source voltage of the STL75N8LF6?

    A: The maximum drain-source voltage (VDS) is 80 V.

  2. Q: What is the maximum drain current of the STL75N8LF6?

    A: The maximum drain current (ID) is 18 A.

  3. Q: What is the typical on-state resistance (RDS(on)) of the STL75N8LF6?

    A: The maximum on-state resistance (RDS(on)) is 0.0074 Ω.

  4. Q: What is the package type of the STL75N8LF6?

    A: The package type is PowerFLAT 5x6.

  5. Q: What is the maximum junction temperature of the STL75N8LF6?

    A: The maximum junction temperature (Tj) is 175 °C.

  6. Q: How does the STL75N8LF6 ensure EMI immunity?

    A: The STL75N8LF6 features a low Crss/Ciss ratio, which enhances EMI immunity.

  7. Q: What are the typical applications of the STL75N8LF6?

    A: Typical applications include industrial power management, switching power supplies, motor control and drives, power factor correction (PFC), and DC-DC converters.

  8. Q: Is the STL75N8LF6 RoHS compliant?

    A: Yes, the STL75N8LF6 is RoHS compliant.

  9. Q: How can I order the STL75N8LF6?

    A: You can order the STL75N8LF6 through authorized distributors or directly from STMicroelectronics' website by selecting the 'Add to Cart' button and proceeding to the checkout page.

  10. Q: What is the warranty period for the STL75N8LF6?

    A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 4.5 V
Vgs (Max):+21V, -16V
Input Capacitance (Ciss) (Max) @ Vds:6895 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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