Overview
The STL45N10F7AG is a high-performance N-channel Power MOSFET from STMicroelectronics, designed to meet the stringent requirements of modern power electronics. This device utilizes STripFET™ F7 technology, featuring an enhanced trench gate structure that significantly reduces on-state resistance, internal capacitance, and gate charge. This results in faster and more efficient switching, making it ideal for a variety of industrial and consumer electronics applications. The STL45N10F7AG is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STL45N10F7AG | |
| VDS (Drain-source voltage) | 100 | V |
| VGS (Gate-source voltage) | ±20 | V |
| ID (Continuous drain current at TC = 25 °C) | 18 | A |
| IDM (Pulsed drain current) | 72 | A |
| PTOT (Total dissipation at TC = 25 °C) | 72 | W |
| RDS(on) (Static drain-source on-resistance at VGS = 10 V, ID = 9 A) | 20 - 24 | mΩ |
| TJ (Operating junction temperature range) | -55 to 175 | °C |
| Rthj-case (Thermal resistance junction-case) | 2.08 | °C/W |
| Rthj-pcb (Thermal resistance junction-pcb) | 31.3 | °C/W |
| Package | PowerFLAT™ 5x6 WF |
Key Features
- AEC-Q101 qualified: Ensures reliable performance in automotive and other demanding applications.
- Low RDS(on): Among the lowest on the market, resulting in better efficiency and power handling.
- Excellent FoM (figure of merit): Measures the device's overall performance, indicating high efficiency.
- Low Crss/Ciss ratio: Provides improved EMI immunity, reducing noise in electronic systems.
- High avalanche ruggedness: Enhances the device's ability to withstand high-energy pulses.
- Wettable flank package: Facilitates easier inspection and soldering processes.
Applications
The STL45N10F7AG is widely used in various applications due to its high performance and reliability. These include:
- Power electronics systems: Where efficiency, reliability, and compactness are critical.
- Automotive systems: Benefiting from its AEC-Q101 qualification and high ruggedness.
- High-frequency switching applications: Leveraging its low RDS(on) and reduced internal capacitance and gate charge.
Q & A
- What is the typical RDS(on) of the STL45N10F7AG?
The typical RDS(on) is 24 mΩ at VGS = 10 V and ID = 9 A.
- What is the maximum continuous drain current of the STL45N10F7AG?
The maximum continuous drain current is 18 A at TC = 25 °C and TC = 100 °C.
- Is the STL45N10F7AG AEC-Q101 qualified?
Yes, the STL45N10F7AG is AEC-Q101 qualified, ensuring its reliability in automotive applications.
- What is the operating junction temperature range of the STL45N10F7AG?
The operating junction temperature range is -55 to 175 °C.
- What package type does the STL45N10F7AG use?
The STL45N10F7AG uses a PowerFLAT™ 5x6 WF package.
- What are the key features of the STL45N10F7AG?
The key features include low RDS(on), excellent FoM, low Crss/Ciss ratio, high avalanche ruggedness, and a wettable flank package.
- What are the typical applications of the STL45N10F7AG?
Typical applications include power electronics systems, automotive systems, and high-frequency switching applications.
- How does the STripFET™ F7 technology benefit the STL45N10F7AG?
The STripFET™ F7 technology reduces on-state resistance, internal capacitance, and gate charge, resulting in faster and more efficient switching.
- What is the thermal resistance junction-case of the STL45N10F7AG?
The thermal resistance junction-case is 2.08 °C/W.
- What is the maximum single pulse avalanche energy of the STL45N10F7AG?
The maximum single pulse avalanche energy is 150 mJ.
