STL42P4LLF6
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STMicroelectronics STL42P4LLF6

Manufacturer No:
STL42P4LLF6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 42A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL42P4LLF6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET F6 technology. This device features a new trench gate structure, which enhances its performance and efficiency. It is packaged in a PowerFLAT 5x6 package, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value
Type of Transistor P-channel MOSFET
Voltage Rating (Vds) 40 V
On-Resistance (Rds(on)) 0.0155 Ohm (typ.)
Continuous Drain Current (Id) 42 A
Power Dissipation (Pd) 75 W (Tc)
Package Type PowerFLAT 5x6
Mounting Type Surface Mount

Key Features

  • Advanced STripFET F6 technology with a new trench gate structure for improved performance and efficiency.
  • Low on-resistance (Rds(on)) of 0.0155 Ohm (typ.), reducing power losses.
  • High continuous drain current of 42 A, suitable for high-power applications.
  • Compact PowerFLAT 5x6 package, ideal for space-constrained designs.
  • Surface mount technology for easy integration into PCBs.

Applications

  • Power management in automotive systems, such as battery management and motor control.
  • Industrial power supplies and DC-DC converters.
  • Consumer electronics, including power adapters and battery chargers.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the STL42P4LLF6 MOSFET?

    The voltage rating (Vds) of the STL42P4LLF6 is 40 V.

  2. What is the typical on-resistance (Rds(on)) of the STL42P4LLF6?

    The typical on-resistance (Rds(on)) is 0.0155 Ohm.

  3. What is the continuous drain current (Id) of the STL42P4LLF6?

    The continuous drain current (Id) is 42 A.

  4. What type of package does the STL42P4LLF6 use?

    The STL42P4LLF6 is packaged in a PowerFLAT 5x6 package.

  5. What is the power dissipation (Pd) of the STL42P4LLF6?

    The power dissipation (Pd) is 75 W (Tc).

  6. What technology is used in the STL42P4LLF6 MOSFET?

    The STL42P4LLF6 uses the advanced STripFET F6 technology.

  7. What are some common applications of the STL42P4LLF6?

    Common applications include automotive systems, industrial power supplies, consumer electronics, and renewable energy systems.

  8. How is the STL42P4LLF6 mounted?

    The STL42P4LLF6 is a surface mount device.

  9. Where can I find detailed specifications for the STL42P4LLF6?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and TME.

  10. What are the benefits of using the STripFET F6 technology in the STL42P4LLF6?

    The STripFET F6 technology provides improved performance, efficiency, and reduced power losses due to its advanced trench gate structure.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL42P4LLF6 STL42P6LLF6
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 5A, 10V 26mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V 30 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 25 V 3780 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 75W (Tc) 100W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN

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