STH2N120K5-2AG
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STMicroelectronics STH2N120K5-2AG

Manufacturer No:
STH2N120K5-2AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1200V 1.5A H2PAK-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH2N120K5-2AG is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure, enhancing the device's performance and reliability. The MOSFET is particularly suited for applications requiring high voltage and moderate current handling capabilities, making it a robust choice for various industrial and automotive applications.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)1.2 kV
Continuous Drain Current (Id)1.5 A
Drain-Source Resistance (Rds On)10 Ohms
Gate-Source Voltage (Vgs)-/+/20 V
Power Dissipation (Pd)60 W (Tc)
PackageH2PAK-2 (Surface Mount)

Key Features

  • High voltage capability: 1.2 kV drain-source breakdown voltage.
  • Low on-resistance: 10 Ohms, reducing power losses.
  • High current handling: Continuous drain current of 1.5 A.
  • Automotive-grade: Suitable for demanding automotive applications.
  • MDmesh K5 technology: Enhances performance and reliability through an innovative proprietary vertical structure.

Applications

The STH2N120K5-2AG is designed for use in various high-voltage applications, including:

  • Automotive systems: Such as electric vehicles, hybrid vehicles, and other automotive power systems.
  • Industrial power supplies: High-voltage DC-DC converters and power management systems.
  • Motor control: Inverter and converter applications for motor drives.
  • Power conditioning: High-voltage power conditioning and filtering systems.

Q & A

  1. What is the drain-source breakdown voltage of the STH2N120K5-2AG?
    The drain-source breakdown voltage is 1.2 kV.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 1.5 A.
  3. What is the typical on-resistance of the STH2N120K5-2AG?
    The typical on-resistance is 10 Ohms.
  4. What technology is used in the STH2N120K5-2AG?
    The STH2N120K5-2AG uses MDmesh K5 technology.
  5. What is the power dissipation capability of this MOSFET?
    The power dissipation capability is 60 W (Tc).
  6. In what package is the STH2N120K5-2AG available?
    The STH2N120K5-2AG is available in the H2PAK-2 surface mount package.
  7. Is the STH2N120K5-2AG suitable for automotive applications?
    Yes, it is automotive-grade and suitable for demanding automotive applications.
  8. What are some common applications of the STH2N120K5-2AG?
    Common applications include automotive systems, industrial power supplies, motor control, and power conditioning systems.
  9. Where can I purchase the STH2N120K5-2AG?
    You can purchase the STH2N120K5-2AG from distributors such as Digi-Key, Mouser, and other authorized STMicroelectronics suppliers.
  10. What is the significance of MDmesh K5 technology in this MOSFET?
    MDmesh K5 technology enhances the performance and reliability of the MOSFET through an innovative proprietary vertical structure.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:124 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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