Overview
The STH270N8F7-2 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device features an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it ideal for high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 180 | A |
| Pulsed Drain Current (IDM) | 720 | A |
| Total Power Dissipation at TC = 25 °C (PTOT) | 315 | W |
| Single Pulse Avalanche Energy (EAS) | 1.16 | J |
| Operating Junction Temperature (Tj) | -55 to 175 | °C |
| Maximum On-State Resistance (RDS(on)) | 0.0021 Ω | Ω |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.48 | °C/W |
| Thermal Resistance, Junction-to-Board (RthJB) | 35 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 62.5 | °C/W |
Key Features
- Among the lowest RDS(on) on the market, with a maximum value of 0.0021 Ω for the STH270N8F7-2.
- Excellent figure of merit (FoM) for high efficiency and performance.
- Low Crss/Ciss ratio for enhanced EMI immunity.
- High avalanche ruggedness, ensuring robust operation under various conditions.
- Ultra-low on-resistance and reduced internal capacitance and gate charge for faster and more efficient switching.
Applications
The STH270N8F7-2 is primarily used in switching applications where high efficiency, low on-state resistance, and fast switching times are critical. These include but are not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Automotive and industrial power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STH270N8F7-2?
The maximum drain-source voltage (VDS) is 80 V.
- What is the continuous drain current (ID) rating at 25 °C?
The continuous drain current (ID) rating at 25 °C is 180 A.
- What is the maximum on-state resistance (RDS(on)) of the STH270N8F7-2?
The maximum on-state resistance (RDS(on)) is 0.0021 Ω.
- What are the thermal resistance values for the STH270N8F7-2?
The thermal resistance values are RthJC = 0.48 °C/W, RthJB = 35 °C/W, and RthJA = 62.5 °C/W.
- What is the operating junction temperature range for the STH270N8F7-2?
The operating junction temperature range is -55 to 175 °C.
- What are the key features of the STripFET F7 technology used in the STH270N8F7-2?
The key features include among the lowest RDS(on) on the market, excellent FoM, low Crss/Ciss ratio for EMI immunity, and high avalanche ruggedness.
- In which packages is the STH270N8F7-2 available?
The STH270N8F7-2 is available in H²PAK-2, H²PAK-6, and TO-220 packages.
- What is the single pulse avalanche energy (EAS) rating for the STH270N8F7-2?
The single pulse avalanche energy (EAS) rating is 1.16 J.
- What are the typical applications for the STH270N8F7-2?
The STH270N8F7-2 is typically used in switching applications such as power supplies, motor control, and high-frequency switching circuits.
- How does the STripFET F7 technology enhance the performance of the STH270N8F7-2?
The STripFET F7 technology enhances performance by reducing on-state resistance, internal capacitance, and gate charge, leading to faster and more efficient switching.
