STH270N8F7-6
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STMicroelectronics STH270N8F7-6

Manufacturer No:
STH270N8F7-6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 180A H2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH270N8F7-6 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance. The STH270N8F7-6 is designed to meet the demands of high-power applications, offering superior efficiency and reliability.

Key Specifications

Parameter Value
Drain to Source Voltage (Vdss) 80 V
Continuous Drain Current (Id) @ 25°C 180 A (Tc)
On-State Resistance (Rds(on)) 1.7 mΩ typ.
Package H2PAK-6

Key Features

  • Advanced STripFET F7 technology with enhanced trench gate structure for low on-state resistance.
  • High continuous drain current of 180 A at 25°C.
  • Low Rds(on) of 1.7 mΩ typical, ensuring high efficiency in power applications.
  • H2PAK-6 package for excellent thermal performance and compact design.
  • High voltage rating of 80 V, suitable for a wide range of power applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and automation.
  • Automotive systems requiring high power and efficiency.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain to source voltage of the STH270N8F7-6?

    The maximum drain to source voltage (Vdss) is 80 V.

  2. What is the continuous drain current rating of the STH270N8F7-6 at 25°C?

    The continuous drain current (Id) at 25°C is 180 A.

  3. What is the typical on-state resistance of the STH270N8F7-6?

    The typical on-state resistance (Rds(on)) is 1.7 mΩ.

  4. In what package is the STH270N8F7-6 available?

    The STH270N8F7-6 is available in the H2PAK-6 package.

  5. What are some common applications for the STH270N8F7-6?

    Common applications include power supplies, motor control systems, industrial power systems, automotive systems, and renewable energy systems.

  6. What technology is used in the STH270N8F7-6?

    The STH270N8F7-6 uses STMicroelectronics' advanced STripFET F7 technology.

  7. How does the STripFET F7 technology benefit the performance of the STH270N8F7-6?

    The STripFET F7 technology enhances the trench gate structure, resulting in very low on-state resistance and high efficiency.

  8. Is the STH270N8F7-6 suitable for high-power applications?

    Yes, the STH270N8F7-6 is designed to meet the demands of high-power applications due to its high current rating and low on-state resistance.

  9. What are the thermal benefits of the H2PAK-6 package?

    The H2PAK-6 package provides excellent thermal performance, which is crucial for high-power applications to ensure reliable operation.

  10. Can the STH270N8F7-6 be used in automotive applications?

    Yes, the STH270N8F7-6 can be used in automotive systems that require high power and efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:193 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13600 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):315W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H²PAK
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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In Stock

$5.51
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Same Series
STH270N8F7-6
STH270N8F7-6
MOSFET N-CH 80V 180A H2PAK
STH270N8F7-2
STH270N8F7-2
MOSFET N-CH 80V 180A H2PAK

Similar Products

Part Number STH270N8F7-6 STH270N8F7-2
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V 2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 193 nC @ 10 V 193 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 50 V 13600 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 315W (Tc) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H²PAK H²PAK
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab) Variant

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