STH12N120K5-2
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STMicroelectronics STH12N120K5-2

Manufacturer No:
STH12N120K5-2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1200V 12A H2PAK-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH12N120K5-2 is a high-voltage N-channel Power MOSFET designed and manufactured by STMicroelectronics. This device utilizes the innovative MDmesh™ K5 technology, which is based on a proprietary vertical structure. It is engineered to provide high efficiency and reliability in medium power applications. The MOSFET is packaged in the H2PAK-2 surface mount format, making it suitable for a variety of power management and control systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)1200 V
Continuous Drain Current (Id)12 A
On-State Resistance (Rds(on))0.62 Ω (typical at Vgs = 10 V, Id = 6 A)
Power Dissipation (Pd)250 W (at Tc = 25°C)
Package TypeH2PAK-2, Surface Mount
RoHS ComplianceYes

Key Features

  • High voltage rating of 1200 V, making it suitable for high-power applications.
  • Continuous drain current of 12 A, ensuring robust performance.
  • Low on-state resistance of 0.62 Ω, which minimizes power losses and enhances efficiency.
  • MDmesh™ K5 technology for improved thermal performance and reliability.
  • H2PAK-2 surface mount package for easy integration into various systems.

Applications

The STH12N120K5-2 is designed for use in a range of medium to high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-voltage power management in consumer and industrial electronics.

Q & A

  1. What is the voltage rating of the STH12N120K5-2 MOSFET?
    The voltage rating of the STH12N120K5-2 MOSFET is 1200 V.
  2. What is the continuous drain current of the STH12N120K5-2?
    The continuous drain current is 12 A.
  3. What is the on-state resistance of the STH12N120K5-2?
    The on-state resistance is typically 0.62 Ω at Vgs = 10 V and Id = 6 A.
  4. What package type is the STH12N120K5-2 available in?
    The STH12N120K5-2 is available in the H2PAK-2 surface mount package.
  5. Is the STH12N120K5-2 RoHS compliant?
    Yes, the STH12N120K5-2 is RoHS compliant.
  6. What technology is used in the STH12N120K5-2?
    The STH12N120K5-2 uses MDmesh™ K5 technology.
  7. What are some typical applications for the STH12N120K5-2?
    Typical applications include power supplies, motor control systems, industrial automation, renewable energy systems, and high-voltage power management.
  8. What is the maximum power dissipation of the STH12N120K5-2?
    The maximum power dissipation is 250 W at Tc = 25°C.
  9. Where can I purchase the STH12N120K5-2?
    The STH12N120K5-2 can be purchased from various distributors such as Digi-Key, Element14, and other authorized STMicroelectronics suppliers.
  10. Is the STH12N120K5-2 suitable for high-power applications?
    Yes, the STH12N120K5-2 is designed for medium to high-power applications due to its high voltage and current ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:690mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:44.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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