STF35N60DM2
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STMicroelectronics STF35N60DM2

Manufacturer No:
STF35N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 28A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF35N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-performance applications requiring efficient switching and minimal losses.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)17 A
PD (Power Dissipation)40 W
RDS(on) (On-State Resistance)Typically 150 mΩ at VGS = 10 V
Qrr (Recovery Charge)Very low recovery charge
trr (Recovery Time)Very low recovery time
dv/dt RuggednessExtremely high dv/dt ruggedness

Key Features

  • High voltage N-channel Power MOSFET with MDmesh™ DM2 technology
  • Very low recovery charge (Qrr) and time (trr)
  • Extremely high dv/dt ruggedness
  • Low on-state resistance (RDS(on))
  • High power dissipation capability (40 W)

Applications

The STF35N60DM2 is suitable for various high-performance applications, including but not limited to:

  • Switch-mode power supplies
  • Motor control and drives
  • High-frequency switching circuits
  • Power conversion systems

Q & A

  1. What is the maximum drain-source voltage of the STF35N60DM2?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the maximum drain current of the STF35N60DM2?
    The maximum drain current (ID) is 17 A.
  3. What is the power dissipation capability of the STF35N60DM2?
    The power dissipation capability (PD) is 40 W.
  4. What is notable about the recovery charge and time of the STF35N60DM2?
    The STF35N60DM2 has very low recovery charge (Qrr) and time (trr).
  5. What is the on-state resistance of the STF35N60DM2?
    The on-state resistance (RDS(on)) is typically 150 mΩ at VGS = 10 V.
  6. What is the dv/dt ruggedness of the STF35N60DM2?
    The STF35N60DM2 has extremely high dv/dt ruggedness.
  7. In which applications is the STF35N60DM2 commonly used?
    The STF35N60DM2 is commonly used in switch-mode power supplies, motor control and drives, high-frequency switching circuits, and power conversion systems.
  8. What technology does the STF35N60DM2 use?
    The STF35N60DM2 uses MDmesh™ DM2 technology.
  9. Where can I find detailed specifications for the STF35N60DM2?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like DigiKey and TME.
  10. Is the STF35N60DM2 suitable for high-performance switching applications?
    Yes, the STF35N60DM2 is designed for high-performance switching applications due to its low recovery charge and time, and high dv/dt ruggedness.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF35N60DM2 STF35N65DM2 STF33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 32A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V 110mOhm @ 16A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 56.3 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V 2540 pF @ 100 V 1870 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 40W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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