STF10LN80K5
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STMicroelectronics STF10LN80K5

Manufacturer No:
STF10LN80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 8A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF10LN80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure, which enhances the device's performance and efficiency. The STF10LN80K5 is particularly suited for applications requiring high voltage and current handling capabilities.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
Continuous Drain Current (Id)8 A
On-Resistance (Rds(on))0.55 Ω (typ.)
Power Dissipation (Pd)25 W (Tc)
PackageTO-220FP

Key Features

  • High voltage rating of 800 V, making it suitable for high-voltage applications.
  • Low on-resistance (Rds(on)) of 0.55 Ω (typ.), which reduces power losses and improves efficiency.
  • Continuous drain current of 8 A, supporting high current requirements.
  • MDmesh™ K5 technology for enhanced performance and reliability.
  • TO-220FP package, offering good thermal dissipation and ease of mounting.

Applications

  • Switch-mode power supplies (SMPS) and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage industrial and medical equipment.
  • Power factor correction (PFC) circuits.
  • Aerospace and defense applications requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the STF10LN80K5?
    The voltage rating of the STF10LN80K5 is 800 V.
  2. What is the continuous drain current of the STF10LN80K5?
    The continuous drain current of the STF10LN80K5 is 8 A.
  3. What is the typical on-resistance of the STF10LN80K5?
    The typical on-resistance (Rds(on)) of the STF10LN80K5 is 0.55 Ω.
  4. In what package is the STF10LN80K5 available?
    The STF10LN80K5 is available in the TO-220FP package.
  5. What technology is used in the STF10LN80K5?
    The STF10LN80K5 uses MDmesh™ K5 technology.
  6. What are some common applications for the STF10LN80K5?
    Common applications include switch-mode power supplies, motor control systems, high-voltage industrial equipment, and power factor correction circuits.
  7. What is the power dissipation capability of the STF10LN80K5?
    The power dissipation capability of the STF10LN80K5 is 25 W (Tc).
  8. Is the STF10LN80K5 suitable for high-temperature environments?
    Yes, the STF10LN80K5 is designed to operate in a wide temperature range, making it suitable for high-temperature environments.
  9. Can the STF10LN80K5 be used in automotive applications?
    While it is not specifically automotive-grade, it can be used in various high-voltage applications, but it is important to check the specific requirements of the automotive application.
  10. Where can I purchase the STF10LN80K5?
    The STF10LN80K5 can be purchased from the STMicroelectronics online store, as well as from various authorized distributors such as Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:630mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:427 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF10LN80K5 STF10N80K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 630mOhm @ 4A, 10V 600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 427 pF @ 100 V 635 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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