Overview
The STD8NM50N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its vertical structure combined with STMicroelectronics' strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters.
The STD8NM50N is available in the DPAK package and is characterized by its high voltage rating of 500 V, a typical on-resistance of 0.73 Ω, and a continuous drain current of 5 A. These characteristics make it an ideal choice for various switching applications where high efficiency and reliability are crucial.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at Tcase = 25 °C | 5 | A |
| Continuous Drain Current (ID) at Tcase = 100 °C | 3 | A |
| Pulsed Drain Current (IDM) | 20 | A |
| Total Dissipation at Tcase = 25 °C (PTOT) | 45 | W |
| On-Resistance (RDS(on)) max. | 0.79 | Ω |
| Total Gate Charge (Qg) | 14 | nC |
| Output Capacitance (Coss) | 364 | pF |
| Reverse Transfer Capacitance (Crss) | 1.2 | pF |
| Intrinsic Gate Resistance (RG) | 5.4 | Ω |
Key Features
- 100% avalanche tested, ensuring robustness and reliability.
- Low input capacitance and gate charge, which enhances switching efficiency.
- Low gate input resistance, reducing the energy required for switching.
- High voltage rating of 500 V and a continuous drain current of 5 A.
- Available in DPAK package, suitable for various high-power applications.
Applications
The STD8NM50N is primarily used in switching applications where high efficiency, reliability, and low on-resistance are critical. These include:
- High-efficiency power converters.
- Switch-mode power supplies.
- Motor control and drive systems.
- Power factor correction (PFC) circuits.
- Other high-power switching applications requiring low losses and high reliability.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD8NM50N?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance (RDS(on)) of the STD8NM50N?
The typical on-resistance (RDS(on)) is 0.73 Ω.
- What is the continuous drain current (ID) rating at Tcase = 25 °C?
The continuous drain current (ID) rating at Tcase = 25 °C is 5 A.
- What are the key features of the STD8NM50N?
The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.
- In which package is the STD8NM50N available?
The STD8NM50N is available in the DPAK package.
- What are the typical applications of the STD8NM50N?
Typical applications include high-efficiency power converters, switch-mode power supplies, motor control and drive systems, and power factor correction (PFC) circuits.
- What is the total gate charge (Qg) of the STD8NM50N?
The total gate charge (Qg) is 14 nC.
- What is the intrinsic gate resistance (RG) of the STD8NM50N?
The intrinsic gate resistance (RG) is 5.4 Ω.
- What is the storage temperature range for the STD8NM50N?
The storage temperature range is -55 to 150 °C.
- What is the thermal resistance junction-case (Rthj-case) of the STD8NM50N?
The thermal resistance junction-case (Rthj-case) is 2.78 °C/W.
