STP8NM50N
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STMicroelectronics STP8NM50N

Manufacturer No:
STP8NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 5A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP8NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is characterized by its high voltage and current handling capabilities, making it suitable for a variety of power management and switching applications. Available in DPAK, TO-220, and IPAK packages, the STP8NM50N offers flexibility in design and implementation.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage (Vds)500 V
Continuous Drain Current (Id)5 A (at Tc), 3 A (typical)
On-State Resistance (Rds(on))0.73 Ω (typical)
Power Dissipation (Pd)45 W (at Tc)
Package TypesDPAK, TO-220, IPAK

Key Features

  • High voltage and current handling capabilities.
  • Low on-state resistance (Rds(on)) of 0.73 Ω (typical), reducing power losses.
  • MDmesh™ II technology for improved performance and reliability.
  • Available in multiple package types (DPAK, TO-220, IPAK) for design flexibility.
  • High power dissipation of up to 45 W at Tc.

Applications

The STP8NM50N is suitable for various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power systems.

Q & A

  1. What is the drain-source breakdown voltage of the STP8NM50N?
    The drain-source breakdown voltage (Vds) of the STP8NM50N is 500 V.
  2. What is the continuous drain current of the STP8NM50N?
    The continuous drain current (Id) of the STP8NM50N is 5 A at Tc and 3 A typical.
  3. What is the on-state resistance of the STP8NM50N?
    The on-state resistance (Rds(on)) of the STP8NM50N is 0.73 Ω (typical).
  4. In which packages is the STP8NM50N available?
    The STP8NM50N is available in DPAK, TO-220, and IPAK packages.
  5. What is the power dissipation of the STP8NM50N?
    The power dissipation (Pd) of the STP8NM50N is up to 45 W at Tc.
  6. What technology is used in the STP8NM50N?
    The STP8NM50N uses the second generation of MDmesh™ technology.
  7. What are some common applications of the STP8NM50N?
    The STP8NM50N is commonly used in power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and automotive and industrial power systems.
  8. Why is the STP8NM50N preferred in high-power applications?
    The STP8NM50N is preferred due to its high voltage and current handling capabilities, low on-state resistance, and high power dissipation.
  9. How does the MDmesh™ II technology benefit the STP8NM50N?
    The MDmesh™ II technology improves the performance and reliability of the STP8NM50N by enhancing its electrical characteristics and reducing power losses.
  10. Can the STP8NM50N be used in automotive applications?
    Yes, the STP8NM50N can be used in automotive applications due to its robust design and high performance under various operating conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:790mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:364 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STU8NM50N
STU8NM50N
MOSFET N-CH 500V 5A IPAK
STP8NM50N
STP8NM50N
MOSFET N-CH 500V 5A TO220AB

Similar Products

Part Number STP8NM50N STP8NM60N STP9NM50N STP7NM50N STP8NM50
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V 500 V 550 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 7A (Tc) 5A (Tc) 5A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 790mOhm @ 2.5A, 10V 650mOhm @ 3.5A, 10V 560mOhm @ 3.7A, 10V 780mOhm @ 2.5A, 10V 800mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V 12 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 364 pF @ 50 V 560 pF @ 50 V 570 pF @ 50 V 400 pF @ 50 V 415 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 70W (Tc) 45W (Tc) 100W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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