Overview
The STD7NM80 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their revolutionary MDmesh technology. This device combines the multiple drain process with STMicroelectronics' PowerMESH horizontal layout, resulting in extremely low on-resistance, high dv/dt capability, and excellent avalanche characteristics. The STD7NM80 is designed to offer superior dynamic performance compared to similar products on the market, making it suitable for high-efficiency converters and demanding switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-source voltage | VDS | 800 | V |
| Gate-source voltage | VGS | ±30 | V |
| Drain current (continuous) at TC = 25 °C | ID | 6.5 | A |
| Drain current (continuous) at TC = 100 °C | ID | 4 | A |
| Drain current (pulsed) | IDM | 26 | A |
| Total power dissipation at TC = 25 °C | PTOT | 90 | W |
| Thermal resistance, junction-to-case | RthJC | 1.4 | °C/W |
| Thermal resistance, junction-to-ambient | RthJA | 50 | °C/W |
| Avalanche current, repetitive or non-repetitive | IAS | 1 | A |
| Single pulse avalanche energy | EAS | 240 | mJ |
| On-resistance (max) | RDS(on) | 1.05 | Ω |
| Package | DPAK | ||
| Packing | Tape and reel |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely low on-resistance (RDS(on) = 0.95 Ω typ.)
- High dv/dt capability
- Excellent avalanche characteristics
- MDmesh technology for superior dynamic performance
Applications
The STD7NM80 is primarily designed for switching applications, particularly in high-efficiency converters where low on-resistance, high dv/dt capability, and excellent avalanche characteristics are crucial.
Q & A
- What is the maximum drain-source voltage of the STD7NM80?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance of the STD7NM80?
The typical on-resistance (RDS(on)) is 0.95 Ω.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 6.5 A.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RthJC) is 1.4 °C/W.
- What are the key features of the STD7NM80?
The key features include 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and excellent avalanche characteristics.
- What is the typical single pulse avalanche energy?
The typical single pulse avalanche energy (EAS) is 240 mJ.
- What is the maximum operating junction temperature?
The maximum operating junction temperature (TJ) range is -55 to 150 °C.
- What package options are available for the STD7NM80?
The STD7NM80 is available in DPAK, IPAK, TO-220FP, and TO-220 packages.
- What are the typical applications for the STD7NM80?
The STD7NM80 is primarily used in switching applications, especially in high-efficiency converters.
- What technology is used in the STD7NM80?
The STD7NM80 uses STMicroelectronics' MDmesh technology.
