STD7NM80-1
  • Share:

STMicroelectronics STD7NM80-1

Manufacturer No:
STD7NM80-1
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 6.5A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7NM80-1 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of STMicroelectronics' MDmesh technology series, known for its exceptional electrical characteristics and reliability. The STD7NM80-1 is designed to offer extremely low on-resistance, high dv/dt, and excellent avalanche characteristics, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
On-Resistance (Rds(on))0.95 Ω (typ.)
Drain Current (Id)6.5 A
Gate to Source Voltage (Vgs)30 V
Fall Time (tf)10 ns
Input Capacitance (Ciss)620 pF
Maximum Operating Temperature150 °C

Key Features

  • Low on-resistance (Rds(on)) of 0.95 Ω (typ.) for efficient power handling.
  • High dv/dt capability for robust operation in high-frequency applications.
  • Excellent avalanche characteristics for enhanced reliability.
  • MDmesh technology for improved electrical performance and thermal management.
  • High voltage rating of 800 V, suitable for high-power applications.

Applications

The STD7NM80-1 is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems such as solar and wind power.
  • High-frequency switching applications.

Q & A

  1. What is the voltage rating of the STD7NM80-1 MOSFET?
    The voltage rating of the STD7NM80-1 is 800 V.
  2. What is the typical on-resistance of the STD7NM80-1?
    The typical on-resistance is 0.95 Ω.
  3. What is the maximum drain current of the STD7NM80-1?
    The maximum drain current is 6.5 A.
  4. What technology is used in the STD7NM80-1?
    The STD7NM80-1 uses STMicroelectronics' MDmesh technology.
  5. What is the maximum operating temperature of the STD7NM80-1?
    The maximum operating temperature is 150 °C.
  6. What is the gate to source voltage rating of the STD7NM80-1?
    The gate to source voltage rating is 30 V.
  7. What is the fall time of the STD7NM80-1?
    The fall time is 10 ns.
  8. What is the input capacitance of the STD7NM80-1?
    The input capacitance is 620 pF.
  9. In what package is the STD7NM80-1 available?
    The STD7NM80-1 is available in a DPAK package.
  10. What are some common applications for the STD7NM80-1?
    Common applications include power supplies, motor control systems, industrial automation, renewable energy systems, and high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251 (IPAK)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
518

Please send RFQ , we will respond immediately.

Same Series
STF7NM80
STF7NM80
MOSFET N-CH 800V 6.5A TO220FP
STP7NM80
STP7NM80
MOSFET N-CH 800V 6.5A TO220-3
STD7NM80-1
STD7NM80-1
MOSFET N-CH 800V 6.5A IPAK

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STN1NF20
STN1NF20
STMicroelectronics
MOSFET N-CH 200V 1A SOT-223
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP