STD65N3LLH5
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STMicroelectronics STD65N3LLH5

Manufacturer No:
STD65N3LLH5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 30V 65A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD65N3LLH5 is a high-performance N-channel MOSFET produced by STMicroelectronics. This device is part of STMicroelectronics' low-voltage MOSFET portfolio, designed to cater to a wide range of industrial and automotive applications. The STD65N3LLH5 features the DPAK STripFET™ V package, which is known for its high power density and thermal efficiency.

Key Specifications

Parameter Value
Type of Transistor N-Channel MOSFET
Drain-Source Voltage (Vds) 30 V
On-Resistance (Rds(on)) 0.0061 Ohm
Continuous Drain Current (Id) 65 A
Package Type DPAK STripFET™ V

Key Features

  • High current handling capability of up to 65 A.
  • Low on-resistance of 0.0061 Ohm, minimizing power losses.
  • High power density due to the DPAK STripFET™ V package.
  • Thermal efficiency and reliability, making it suitable for demanding applications.
  • Wide range of operating temperatures, enhancing its versatility.

Applications

  • Industrial power supplies and DC-DC converters.
  • Automotive systems, including battery management and motor control.
  • Power management in consumer electronics and computing devices.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STD65N3LLH5 MOSFET?

    The maximum drain-source voltage (Vds) is 30 V.

  2. What is the on-resistance (Rds(on)) of the STD65N3LLH5?

    The on-resistance (Rds(on)) is 0.0061 Ohm.

  3. What is the continuous drain current (Id) rating of the STD65N3LLH5?

    The continuous drain current (Id) is 65 A.

  4. What package type is used for the STD65N3LLH5?

    The package type is DPAK STripFET™ V.

  5. What are some common applications for the STD65N3LLH5 MOSFET?

    Common applications include industrial power supplies, automotive systems, consumer electronics, and renewable energy systems.

  6. Why is the DPAK STripFET™ V package advantageous?

    The DPAK STripFET™ V package offers high power density and thermal efficiency, making it suitable for high-power applications.

  7. What is the significance of low on-resistance in the STD65N3LLH5?

    Low on-resistance minimizes power losses, improving overall efficiency in power management systems.

  8. Can the STD65N3LLH5 be used in high-temperature environments?

    Yes, the STD65N3LLH5 is designed to operate over a wide range of temperatures, making it suitable for demanding environments.

  9. Where can I find detailed specifications for the STD65N3LLH5?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other reputable electronics component databases.

  10. Is the STD65N3LLH5 suitable for automotive applications?

    Yes, the STD65N3LLH5 is suitable for automotive applications due to its robust design and compliance with automotive standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.9mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
Vgs (Max):±22V
Input Capacitance (Ciss) (Max) @ Vds:1290 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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STU65N3LLH5
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