STD25NF10LA
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STMicroelectronics STD25NF10LA

Manufacturer No:
STD25NF10LA
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 25A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD25NF10LA is a high-performance N-channel power MOSFET developed by STMicroelectronics using their unique STripFET process. This technology is designed to minimize input capacitance and gate charge, making the device highly suitable for advanced high-efficiency isolated DC-DC converters. It is particularly beneficial in telecom and computer applications, as well as in scenarios requiring low gate charge driving.

Key Specifications

Parameter Value
Type of Transistor N-MOSFET
Polarisation Unipolar
Drain-Source Voltage (Vds) 100 V
Drain Current (Id) 21 A
Power Dissipation (Pd) 100 W
Package DPAK
Gate-Source Voltage (Vgs) ±16 V
On-State Resistance (Rds(on)) 40 mΩ
Mounting SMD
Kind of Package Reel, Tape
Kind of Channel Enhanced

Key Features

  • Exceptional dv/dt capability: Ensures robust performance under high voltage and current transitions.
  • 100% avalanche tested: Guarantees the device's reliability and durability under extreme conditions.
  • Logic level device: Compatible with standard logic levels, making it easy to integrate into various digital systems.

Applications

The STD25NF10LA is ideal for use as the primary switch in advanced high-efficiency isolated DC-DC converters, particularly in:

  • Telecom applications
  • Computer applications
  • Scenarios requiring low gate charge driving

Q & A

  1. What is the drain-source voltage rating of the STD25NF10LA?

    The drain-source voltage rating is 100 V.

  2. What is the maximum drain current of the STD25NF10LA?

    The maximum drain current is 21 A.

  3. What is the power dissipation capability of the STD25NF10LA?

    The power dissipation capability is 100 W.

  4. What type of package does the STD25NF10LA come in?

    The STD25NF10LA comes in a DPAK package.

  5. Is the STD25NF10LA suitable for high dv/dt applications?
  6. Has the STD25NF10LA been avalanche tested?
  7. What is the gate-source voltage range for the STD25NF10LA?
  8. What is the on-state resistance of the STD25NF10LA?
  9. Is the STD25NF10LA a logic level device?
  10. In what types of applications is the STD25NF10LA commonly used?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1710 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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