Overview
The STD16NF25 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for advanced high-efficiency isolated DC-DC converters and other applications requiring low gate charge driving.
This MOSFET is packaged in a DPAK (TO-252) type C3 package, which is environmentally compliant and meets various ECOPACK specifications. The device is known for its exceptional dv/dt capability, 100% avalanche testing, and low gate charge, making it a reliable choice for switching applications.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-source voltage | 250 | V |
| VGS | Gate-source voltage | ±20 | V |
| ID | Drain current (continuous) at TC = 25 °C | 14 | A |
| ID | Drain current (continuous) at TC = 100 °C | 8.8 | A |
| IDM | Drain current (pulsed) | 56 | A |
| PTOT | Total power dissipation at TC = 25 °C | 85 | W |
| dv/dt | Peak diode recovery voltage slope | 15 | V/ns |
| Tstg | Storage temperature range | -55 to 150 | °C |
| TJ | Operating junction temperature range | - | °C |
| RthJC | Thermal resistance, junction-to-case | 1.47 | °C/W |
| RthJA | Thermal resistance, junction-to-ambient | 50 | °C/W |
| V(BR)DSS | Drain-source breakdown voltage | 250 | V |
| RDS(on) | Static drain-source on resistance | 195 - 235 | mΩ |
| Ciss | Input capacitance | 680 | pF |
| Coss | Output capacitance | 125 | pF |
| Crss | Reverse transfer capacitance | 20 | pF |
| Qg | Total gate charge | 18 | nC |
Key Features
- Exceptional dv/dt capability: Ensures robust performance in high-frequency switching applications.
- 100% avalanche tested: Provides reliability and durability under extreme conditions.
- Low gate charge: Minimizes the energy required to switch the device on and off, enhancing efficiency.
- High drain current and low RDS(on): Supports high current handling with minimal resistance, ideal for power-intensive applications.
- ECOPACK compliant packaging: Meets environmental standards, ensuring the device is eco-friendly.
Applications
- Switching applications: Suitable for primary switch roles in advanced high-efficiency isolated DC-DC converters.
- Telecom and computer applications: Ideal for use in high-efficiency power supplies for telecommunications and computer systems.
- Low gate charge driving requirements: Applicable in scenarios where minimizing gate charge is crucial for efficiency and performance.
Q & A
- What is the maximum drain-source voltage of the STD16NF25?
The maximum drain-source voltage (VDS) is 250 V.
- What is the typical static drain-source on resistance (RDS(on)) of the STD16NF25?
The typical static drain-source on resistance (RDS(on)) is 195 mΩ.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 14 A.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 1.47 °C/W.
- What is the total gate charge (Qg) of the STD16NF25?
The total gate charge (Qg) is 18 nC.
- What are the typical applications of the STD16NF25?
The STD16NF25 is typically used in switching applications, telecom and computer applications, and scenarios with low gate charge driving requirements.
- What is the storage temperature range for the STD16NF25?
The storage temperature range is -55 to 150 °C.
- What is the peak diode recovery voltage slope (dv/dt) of the STD16NF25?
The peak diode recovery voltage slope (dv/dt) is 15 V/ns.
- Is the STD16NF25 100% avalanche tested?
Yes, the STD16NF25 is 100% avalanche tested.
- What type of package does the STD16NF25 come in?
The STD16NF25 comes in a DPAK (TO-252) type C3 package.
