STD17NF25
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STMicroelectronics STD17NF25

Manufacturer No:
STD17NF25
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 250V 17A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD17NF25 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This technology is designed to minimize input capacitance and gate charge, making the device highly suitable for advanced high-efficiency isolated DC-DC converters. The STD17NF25 is particularly useful in telecom and computer applications where low gate charge driving requirements are critical.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 250 V
VGS (Gate-source voltage) ±20 V
ID (Drain current, continuous) at TC = 25 °C 17 A
ID (Drain current, continuous) at TC = 100 °C 10 A
IDM (Drain current, pulsed) 68 A
PTOT (Total power dissipation) at TC = 25 °C 90 W
RDS(on) (Static drain-source on resistance) 140 - 165
V(BR)DSS (Drain-source breakdown voltage) 250 V
VGS(th) (Gate threshold voltage) 2 - 4 V
Ciss (Input capacitance) 1000 pF
Coss (Output capacitance) 178 pF
Qg (Total gate charge) 29.5 nC

Key Features

  • Exceptional dv/dt capability, making it suitable for high-frequency switching applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Low gate charge, which reduces the power required for switching and enhances efficiency.
  • High drain current capability of up to 17 A, suitable for demanding applications.
  • Low RDS(on) of 140 - 165 mΩ, contributing to minimal power losses.
  • High drain-source breakdown voltage of 250 V, providing reliable operation under various conditions.

Applications

  • Advanced high-efficiency isolated DC-DC converters for telecom and computer applications.
  • Switching applications requiring low gate charge driving.
  • High-frequency power supplies where minimal input capacitance and gate charge are crucial.
  • Power management systems in electronic devices where efficiency and reliability are paramount.

Q & A

  1. What is the maximum drain-source voltage of the STD17NF25?

    The maximum drain-source voltage (VDS) is 250 V.

  2. What is the typical on-resistance (RDS(on)) of the STD17NF25?

    The typical on-resistance (RDS(on)) is 140 - 165 mΩ.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 17 A.

  4. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is 2 - 4 V.

  5. What are the key applications of the STD17NF25?

    The key applications include advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and switching applications requiring low gate charge driving.

  6. What is the maximum total power dissipation at 25 °C?

    The maximum total power dissipation (PTOT) at 25 °C is 90 W.

  7. What is the typical input capacitance?

    The typical input capacitance (Ciss) is 1000 pF.

  8. What is the typical total gate charge?

    The typical total gate charge (Qg) is 29.5 nC.

  9. Is the STD17NF25 100% avalanche tested?

    Yes, the STD17NF25 is 100% avalanche tested.

  10. What is the package type of the STD17NF25?

    The package type is DPAK (TO-252) type C3.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD17NF25 STD18NF25 STD16NF25
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 8.5A, 10V 165mOhm @ 8.5A, 10V 235mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29.5 nC @ 10 V 29.5 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V 1000 pF @ 25 V 680 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 90W (Tc) 110W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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