STD18NF25
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STMicroelectronics STD18NF25

Manufacturer No:
STD18NF25
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 250V 17A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD18NF25 is an automotive-grade N-channel power MOSFET developed by STMicroelectronics. It is part of the STripFET II family, designed to offer high efficiency and low gate charge. This MOSFET is available in DPAK and D²PAK packages, making it suitable for a variety of applications requiring high power handling and low on-resistance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 250 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25 °C 17 A
Continuous Drain Current (ID) at TC = 100 °C 12 A
Pulsed Drain Current (IDM) 68 A
Total Dissipation (PTOT) at TC = 25 °C 110 W
Static Drain-Source On-Resistance (RDS(on)) < 0.165 Ω
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 30 - 50 °C/W

Key Features

  • Low Gate Charge: The STD18NF25 features low gate charge, making it suitable for applications with low gate charge driving requirements.
  • Exceptional dv/dt Capability: It has exceptional dv/dt capability, ensuring robust performance in high-frequency switching applications.
  • 100% Avalanche Tested: The device is 100% avalanche tested, ensuring reliability and durability under various operating conditions.
  • High Efficiency: Developed using STMicroelectronics’ unique STripFET process, it minimizes input capacitance and gate charge, enhancing overall efficiency.
  • Automotive Grade: Designed for automotive applications, it meets stringent automotive standards for reliability and performance.

Applications

  • Switching Applications: Ideal for high-efficiency isolated DC-DC converters in telecom and computer applications.
  • Automotive Systems: Suitable for various automotive systems requiring high power handling and reliability.
  • Advanced Power Management: Used in advanced power management systems where low gate charge and high efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage of the STD18NF25?

    The maximum drain-source voltage (VDS) is 250 V.

  2. What is the typical on-resistance of the STD18NF25?

    The typical static drain-source on-resistance (RDS(on)) is 0.14 Ω.

  3. What are the package options for the STD18NF25?

    The STD18NF25 is available in DPAK and D²PAK packages.

  4. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 17 A.

  5. What is the total dissipation at 25 °C?

    The total dissipation (PTOT) at 25 °C is 110 W.

  6. Is the STD18NF25 suitable for automotive applications?
  7. What is the gate threshold voltage range of the STD18NF25?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

  8. What is the thermal resistance junction-case for the DPAK package?

    The thermal resistance junction-case (Rthj-case) for the DPAK package is 1.36 °C/W.

  9. What are some key features of the STD18NF25?
  10. In what types of applications is the STD18NF25 commonly used?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STB18NF25
STB18NF25
MOSFET N-CH 250V 17A D2PAK

Similar Products

Part Number STD18NF25 STD16NF25 STD17NF25
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 14A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 8.5A, 10V 235mOhm @ 6.5A, 10V 165mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29.5 nC @ 10 V 18 nC @ 10 V 29.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V 680 pF @ 25 V 1000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 110W (Tc) 100W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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