STD18NF25
  • Share:

STMicroelectronics STD18NF25

Manufacturer No:
STD18NF25
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 250V 17A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD18NF25 is an automotive-grade N-channel power MOSFET developed by STMicroelectronics. It is part of the STripFET II family, designed to offer high efficiency and low gate charge. This MOSFET is available in DPAK and D²PAK packages, making it suitable for a variety of applications requiring high power handling and low on-resistance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 250 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25 °C 17 A
Continuous Drain Current (ID) at TC = 100 °C 12 A
Pulsed Drain Current (IDM) 68 A
Total Dissipation (PTOT) at TC = 25 °C 110 W
Static Drain-Source On-Resistance (RDS(on)) < 0.165 Ω
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 30 - 50 °C/W

Key Features

  • Low Gate Charge: The STD18NF25 features low gate charge, making it suitable for applications with low gate charge driving requirements.
  • Exceptional dv/dt Capability: It has exceptional dv/dt capability, ensuring robust performance in high-frequency switching applications.
  • 100% Avalanche Tested: The device is 100% avalanche tested, ensuring reliability and durability under various operating conditions.
  • High Efficiency: Developed using STMicroelectronics’ unique STripFET process, it minimizes input capacitance and gate charge, enhancing overall efficiency.
  • Automotive Grade: Designed for automotive applications, it meets stringent automotive standards for reliability and performance.

Applications

  • Switching Applications: Ideal for high-efficiency isolated DC-DC converters in telecom and computer applications.
  • Automotive Systems: Suitable for various automotive systems requiring high power handling and reliability.
  • Advanced Power Management: Used in advanced power management systems where low gate charge and high efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage of the STD18NF25?

    The maximum drain-source voltage (VDS) is 250 V.

  2. What is the typical on-resistance of the STD18NF25?

    The typical static drain-source on-resistance (RDS(on)) is 0.14 Ω.

  3. What are the package options for the STD18NF25?

    The STD18NF25 is available in DPAK and D²PAK packages.

  4. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 17 A.

  5. What is the total dissipation at 25 °C?

    The total dissipation (PTOT) at 25 °C is 110 W.

  6. Is the STD18NF25 suitable for automotive applications?
  7. What is the gate threshold voltage range of the STD18NF25?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

  8. What is the thermal resistance junction-case for the DPAK package?

    The thermal resistance junction-case (Rthj-case) for the DPAK package is 1.36 °C/W.

  9. What are some key features of the STD18NF25?
  10. In what types of applications is the STD18NF25 commonly used?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.24
437

Please send RFQ , we will respond immediately.

Same Series
STB18NF25
STB18NF25
MOSFET N-CH 250V 17A D2PAK

Similar Products

Part Number STD18NF25 STD16NF25 STD17NF25
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 14A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 8.5A, 10V 235mOhm @ 6.5A, 10V 165mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29.5 nC @ 10 V 18 nC @ 10 V 29.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V 680 pF @ 25 V 1000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 110W (Tc) 100W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3