Overview
The STD150N3LLH6 is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics. This device utilizes the 6th generation of ST’s proprietary STripFET VI DeepGATE technology, which features a new gate structure. This design results in the lowest on-resistance (RDS(on)) in its class, making it highly efficient for various power applications. The MOSFET is packaged in a TO-252-3 (DPAK) package and is suitable for surface mount applications. It operates within a temperature range of -55°C to 150°C and has a maximum junction temperature of 175°C.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type of Transistor | MOSFET N-Channel | |
| Maximum Drain-Source Voltage (Vds) | 30 | V |
| Maximum Gate-Source Voltage (Vgs) | 20 | V |
| Maximum Drain Current (Id) | 80 | A |
| Maximum Junction Temperature (Tj) | 175 | °C |
| On-State Resistance (RDS(on)) | 0.0028 | Ω |
| Output Capacitance (Coss) | 740 | pF |
| Gate Charge (Qg) | 29 | nC @ 4.5V |
| Maximum Power Dissipation (Pd) | 110 | W |
| Package | TO-252-3 (DPAK) |
Key Features
- Extremely low on-resistance (RDS(on)) of 0.0028 Ω, setting an industry benchmark.
- High avalanche ruggedness, ensuring robust performance under various conditions.
- Low gate drive power losses, enhancing efficiency in switching applications.
- Utilizes ST’s proprietary STripFET VI DeepGATE technology with a new gate structure for improved performance.
Applications
The STD150N3LLH6 is designed for high-performance switching applications. It is particularly suitable for use in power management systems, motor control, DC-DC converters, and other high-power electronic devices where low on-resistance and high current handling are critical. Its robust design and high avalanche ruggedness make it an excellent choice for automotive and industrial applications as well.
Q & A
- What is the maximum drain-source voltage of the STD150N3LLH6 MOSFET?
The maximum drain-source voltage (Vds) is 30 V.
- What is the maximum drain current of the STD150N3LLH6 MOSFET?
The maximum drain current (Id) is 80 A.
- What is the on-state resistance (RDS(on)) of the STD150N3LLH6 MOSFET?
The on-state resistance (RDS(on)) is 0.0028 Ω.
- What is the maximum junction temperature of the STD150N3LLH6 MOSFET?
The maximum junction temperature (Tj) is 175°C.
- What package type is the STD150N3LLH6 MOSFET available in?
The STD150N3LLH6 MOSFET is available in the TO-252-3 (DPAK) package.
- What technology does the STD150N3LLH6 MOSFET use?
The STD150N3LLH6 MOSFET uses ST’s proprietary STripFET VI DeepGATE technology.
- What are the key features of the STD150N3LLH6 MOSFET?
The key features include extremely low on-resistance, high avalanche ruggedness, and low gate drive power losses.
- What are the typical applications for the STD150N3LLH6 MOSFET?
The typical applications include high-performance switching, power management systems, motor control, and DC-DC converters.
- What is the maximum power dissipation of the STD150N3LLH6 MOSFET?
The maximum power dissipation (Pd) is 110 W.
- What is the gate charge (Qg) of the STD150N3LLH6 MOSFET?
The gate charge (Qg) is 29 nC at 4.5 V.
- What is the operating temperature range of the STD150N3LLH6 MOSFET?
The operating temperature range is -55°C to 150°C.
