STD110N8F6
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STMicroelectronics STD110N8F6

Manufacturer No:
STD110N8F6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 80A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD110N8F6 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, resulting in very low on-resistance (RDS(on)) and high performance in various applications. The MOSFET is packaged in a DPAK (TO-252-3) package, making it suitable for surface mount applications. It is designed to handle high current and voltage requirements, making it a robust choice for power management and switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)80V
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25 °C80A
Continuous Drain Current (ID) at TC = 100 °C72A
Pulsed Drain Current (IDM)320A
Total Dissipation (PTOT) at TC = 25 °C167W
Operating Junction Temperature (TJ)-55 to 175°C
Gate Threshold Voltage (VGS(th))2.5 to 4.5V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 40 A0.0056 to 0.0065Ω
Total Gate Charge (Qg)150nC
Thermal Resistance Junction-Case (Rthj-case)0.9°C/W
Thermal Resistance Junction-PCB (Rthj-pcb)50°C/W

Key Features

  • Very low on-resistance (RDS(on)) of 0.0056 to 0.0065 Ω at VGS = 10 V, ID = 40 A.
  • Very low gate charge, reducing gate drive power loss.
  • High avalanche ruggedness, enhancing reliability in harsh operating conditions.
  • Low gate drive power loss, making it efficient for high-frequency applications.
  • Advanced STripFET™ F6 technology with a new trench gate structure.

Applications

  • Switching applications, including power supplies, DC-DC converters, and motor control.
  • Audio and video receivers.
  • Surround sound systems.
  • Assistive voice recognition systems.
  • Wireless audio transmission systems.
  • Embedded general-purpose applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD110N8F6 MOSFET?
    The maximum drain-source voltage (VDS) is 80 V.
  2. What is the continuous drain current (ID) at 25 °C for the STD110N8F6?
    The continuous drain current (ID) at 25 °C is 80 A.
  3. What is the typical on-resistance (RDS(on)) of the STD110N8F6?
    The typical on-resistance (RDS(on)) is 0.0056 Ω at VGS = 10 V, ID = 40 A.
  4. What is the maximum gate-source voltage (VGS) for the STD110N8F6?
    The maximum gate-source voltage (VGS) is ±20 V.
  5. What is the total dissipation (PTOT) at 25 °C for the STD110N8F6?
    The total dissipation (PTOT) at 25 °C is 167 W.
  6. What is the operating junction temperature range for the STD110N8F6?
    The operating junction temperature range is -55 to 175 °C.
  7. What is the thermal resistance junction-case (Rthj-case) for the STD110N8F6?
    The thermal resistance junction-case (Rthj-case) is 0.9 °C/W.
  8. What is the package type of the STD110N8F6 MOSFET?
    The package type is DPAK (TO-252-3).
  9. Is the STD110N8F6 RoHS compliant?
    Yes, the STD110N8F6 is RoHS compliant.
  10. What technology is used in the STD110N8F6 MOSFET?
    The STD110N8F6 uses the advanced STripFET™ F6 technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9130 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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