Overview
The STD110N8F6 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, resulting in very low on-resistance (RDS(on)) and high performance in various applications. The MOSFET is packaged in a DPAK (TO-252-3) package, making it suitable for surface mount applications. It is designed to handle high current and voltage requirements, making it a robust choice for power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 80 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 72 | A |
| Pulsed Drain Current (IDM) | 320 | A |
| Total Dissipation (PTOT) at TC = 25 °C | 167 | W |
| Operating Junction Temperature (TJ) | -55 to 175 | °C |
| Gate Threshold Voltage (VGS(th)) | 2.5 to 4.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 40 A | 0.0056 to 0.0065 | Ω |
| Total Gate Charge (Qg) | 150 | nC |
| Thermal Resistance Junction-Case (Rthj-case) | 0.9 | °C/W |
| Thermal Resistance Junction-PCB (Rthj-pcb) | 50 | °C/W |
Key Features
- Very low on-resistance (RDS(on)) of 0.0056 to 0.0065 Ω at VGS = 10 V, ID = 40 A.
- Very low gate charge, reducing gate drive power loss.
- High avalanche ruggedness, enhancing reliability in harsh operating conditions.
- Low gate drive power loss, making it efficient for high-frequency applications.
- Advanced STripFET™ F6 technology with a new trench gate structure.
Applications
- Switching applications, including power supplies, DC-DC converters, and motor control.
- Audio and video receivers.
- Surround sound systems.
- Assistive voice recognition systems.
- Wireless audio transmission systems.
- Embedded general-purpose applications.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD110N8F6 MOSFET?
The maximum drain-source voltage (VDS) is 80 V. - What is the continuous drain current (ID) at 25 °C for the STD110N8F6?
The continuous drain current (ID) at 25 °C is 80 A. - What is the typical on-resistance (RDS(on)) of the STD110N8F6?
The typical on-resistance (RDS(on)) is 0.0056 Ω at VGS = 10 V, ID = 40 A. - What is the maximum gate-source voltage (VGS) for the STD110N8F6?
The maximum gate-source voltage (VGS) is ±20 V. - What is the total dissipation (PTOT) at 25 °C for the STD110N8F6?
The total dissipation (PTOT) at 25 °C is 167 W. - What is the operating junction temperature range for the STD110N8F6?
The operating junction temperature range is -55 to 175 °C. - What is the thermal resistance junction-case (Rthj-case) for the STD110N8F6?
The thermal resistance junction-case (Rthj-case) is 0.9 °C/W. - What is the package type of the STD110N8F6 MOSFET?
The package type is DPAK (TO-252-3). - Is the STD110N8F6 RoHS compliant?
Yes, the STD110N8F6 is RoHS compliant. - What technology is used in the STD110N8F6 MOSFET?
The STD110N8F6 uses the advanced STripFET™ F6 technology.
